Vertical P-MOSFETs with heterojunction between source/drain and channel

Xiangdong Chen*, Qiqing Ouyang, Kou Chen Liu, Zhonghai Shi, Al Tasch, Sanjay Banerjee

*Corresponding author for this work

Research output: Contribution to conferenceConference Paperpeer-review

4 Scopus citations

Abstract

In this study, it is experimentally demonstrated that the heterojunction at the source can be used to suppress the floating body effect and short-channel effect. Vertical P-MOSFETs with strained SiGe and SiGeC sources are used. The electrical characteristics of the devices are compared with those of control Si devices and with simulation results.

Original languageEnglish
Pages25-26
Number of pages2
StatePublished - 2000
Externally publishedYes
Event58th Device Research Conference (58th DRC) - Denver, CO, USA
Duration: 19 06 200021 06 2000

Conference

Conference58th Device Research Conference (58th DRC)
CityDenver, CO, USA
Period19/06/0021/06/00

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