Abstract
In this study, it is experimentally demonstrated that the heterojunction at the source can be used to suppress the floating body effect and short-channel effect. Vertical P-MOSFETs with strained SiGe and SiGeC sources are used. The electrical characteristics of the devices are compared with those of control Si devices and with simulation results.
Original language | English |
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Pages | 25-26 |
Number of pages | 2 |
State | Published - 2000 |
Externally published | Yes |
Event | 58th Device Research Conference (58th DRC) - Denver, CO, USA Duration: 19 06 2000 → 21 06 2000 |
Conference
Conference | 58th Device Research Conference (58th DRC) |
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City | Denver, CO, USA |
Period | 19/06/00 → 21/06/00 |