Vertical P-MOSFETs with heterojunction between source/drain and channel

Xiangdong Chen; Qiqing Ouyang; Kou Chen Liu; Zhonghai Shi; Al Tasch; Sanjay Banerjee

Vertical P-MOSFETs with heterojunction between source/drain and channel

Xiangdong Chen^*
, Qiqing Ouyang
, Kou Chen Liu
, Zhonghai Shi
, Al Tasch
, Sanjay Banerjee

^*Corresponding author for this work

University of Texas at Austin

Research output: Contribution to conference › Conference Paper › peer-review

4 Scopus citations

Abstract

In this study, it is experimentally demonstrated that the heterojunction at the source can be used to suppress the floating body effect and short-channel effect. Vertical P-MOSFETs with strained SiGe and SiGeC sources are used. The electrical characteristics of the devices are compared with those of control Si devices and with simulation results.

Original language	English
Pages	25-26
Number of pages	2
State	Published - 2000
Externally published	Yes
Event	58th Device Research Conference (58th DRC) - Denver, CO, USA Duration: 19 06 2000 → 21 06 2000

Conference

Conference	58th Device Research Conference (58th DRC)
City	Denver, CO, USA
Period	19/06/00 → 21/06/00

Cite this

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title = "Vertical P-MOSFETs with heterojunction between source/drain and channel",

abstract = "In this study, it is experimentally demonstrated that the heterojunction at the source can be used to suppress the floating body effect and short-channel effect. Vertical P-MOSFETs with strained SiGe and SiGeC sources are used. The electrical characteristics of the devices are compared with those of control Si devices and with simulation results.",

author = "Xiangdong Chen and Qiqing Ouyang and Liu, \{Kou Chen\} and Zhonghai Shi and Al Tasch and Sanjay Banerjee",

year = "2000",

language = "英语",

pages = "25--26",

note = "58th Device Research Conference (58th DRC) ; Conference date: 19-06-2000 Through 21-06-2000",

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TY - CONF

T1 - Vertical P-MOSFETs with heterojunction between source/drain and channel

AU - Chen, Xiangdong

AU - Ouyang, Qiqing

AU - Liu, Kou Chen

AU - Shi, Zhonghai

AU - Tasch, Al

AU - Banerjee, Sanjay

PY - 2000

Y1 - 2000

N2 - In this study, it is experimentally demonstrated that the heterojunction at the source can be used to suppress the floating body effect and short-channel effect. Vertical P-MOSFETs with strained SiGe and SiGeC sources are used. The electrical characteristics of the devices are compared with those of control Si devices and with simulation results.

AB - In this study, it is experimentally demonstrated that the heterojunction at the source can be used to suppress the floating body effect and short-channel effect. Vertical P-MOSFETs with strained SiGe and SiGeC sources are used. The electrical characteristics of the devices are compared with those of control Si devices and with simulation results.

UR - https://www.scopus.com/pages/publications/0033645247

M3 - 论文

AN - SCOPUS:0033645247

SP - 25

EP - 26

T2 - 58th Device Research Conference (58th DRC)

Y2 - 19 June 2000 through 21 June 2000

ER -

Vertical P-MOSFETs with heterojunction between source/drain and channel

Abstract

Conference

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