Vertical silicon nanowires with atomic layer deposition with HfO 2 membrane for pH sensing application

Yi Ting Lin; Yu Hong Yu; Yu Chen; Guo Jun Zhang; Shi Yang Zhu; Chia Ming Yang; Kua Yi Lu; Chao Sung Lai

doi:10.1142/S0219519411004897

Vertical silicon nanowires with atomic layer deposition with HfO ₂ membrane for pH sensing application

Yi Ting Lin^*, Yu Hong Yu, Yu Chen, Guo Jun Zhang, Shi Yang Zhu, Chia Ming Yang, Kua Yi Lu, Chao Sung Lai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

Vertical silicon nanowire (SiNW) platforms are candidates for use in ultrasensitive biosensors, with surface-to-volume ratio higher than one-dimensional SiNW. In this paper, a vertical SiNW electrolyteinsulatorsemiconductor (EIS) structure with an ALD-HfO ₂ sensing membrane is proposed for use in a hydrogen ion sensor. Hafnium dioxide is used as the sensing membrane, which was deposited on the surface of the vertical SiNW structure by atomic layer deposition. The sensing properties were examined using a HP4284A high-precision LCR analyzer. A linear relationship was found between the flatband voltage shift and the hydrogen ion concentration. Comparing with different diameters of SiNW, the sensitivity with diameter of 200 nm was slightly higher than 100 nm. A post-deposition rapid thermal annealing (RTA) was utilized to optimize the sensing properties, and the sensitivity was increased to 51.07 mV/pH.

Original language	English
Pages (from-to)	959-966
Number of pages	8
Journal	Journal of Mechanics in Medicine and Biology
Volume	11
Issue number	5
DOIs	https://doi.org/10.1142/S0219519411004897
State	Published - 12 2011

Keywords

Silicon nanowire (SiNW)
electrolyteinsulatorsemiconductor (EIS)
rapid thermal annealing (RTA)

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@article{83dbcb1a679345bfada753e29697f7cb,

title = "Vertical silicon nanowires with atomic layer deposition with HfO 2 membrane for pH sensing application",

abstract = "Vertical silicon nanowire (SiNW) platforms are candidates for use in ultrasensitive biosensors, with surface-to-volume ratio higher than one-dimensional SiNW. In this paper, a vertical SiNW electrolyteinsulatorsemiconductor (EIS) structure with an ALD-HfO 2 sensing membrane is proposed for use in a hydrogen ion sensor. Hafnium dioxide is used as the sensing membrane, which was deposited on the surface of the vertical SiNW structure by atomic layer deposition. The sensing properties were examined using a HP4284A high-precision LCR analyzer. A linear relationship was found between the flatband voltage shift and the hydrogen ion concentration. Comparing with different diameters of SiNW, the sensitivity with diameter of 200 nm was slightly higher than 100 nm. A post-deposition rapid thermal annealing (RTA) was utilized to optimize the sensing properties, and the sensitivity was increased to 51.07 mV/pH.",

keywords = "Silicon nanowire (SiNW), electrolyteinsulatorsemiconductor (EIS), rapid thermal annealing (RTA)",

author = "Lin, {Yi Ting} and Yu, {Yu Hong} and Yu Chen and Zhang, {Guo Jun} and Zhu, {Shi Yang} and Yang, {Chia Ming} and Lu, {Kua Yi} and Lai, {Chao Sung}",

year = "2011",

month = dec,

doi = "10.1142/S0219519411004897",

language = "英语",

volume = "11",

pages = "959--966",

journal = "Journal of Mechanics in Medicine and Biology",

issn = "0219-5194",

publisher = "World Scientific Publishing Co. Pte Ltd",

number = "5",

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TY - JOUR

T1 - Vertical silicon nanowires with atomic layer deposition with HfO 2 membrane for pH sensing application

AU - Lin, Yi Ting

AU - Yu, Yu Hong

AU - Chen, Yu

AU - Zhang, Guo Jun

AU - Zhu, Shi Yang

AU - Yang, Chia Ming

AU - Lu, Kua Yi

AU - Lai, Chao Sung

PY - 2011/12

Y1 - 2011/12

N2 - Vertical silicon nanowire (SiNW) platforms are candidates for use in ultrasensitive biosensors, with surface-to-volume ratio higher than one-dimensional SiNW. In this paper, a vertical SiNW electrolyteinsulatorsemiconductor (EIS) structure with an ALD-HfO 2 sensing membrane is proposed for use in a hydrogen ion sensor. Hafnium dioxide is used as the sensing membrane, which was deposited on the surface of the vertical SiNW structure by atomic layer deposition. The sensing properties were examined using a HP4284A high-precision LCR analyzer. A linear relationship was found between the flatband voltage shift and the hydrogen ion concentration. Comparing with different diameters of SiNW, the sensitivity with diameter of 200 nm was slightly higher than 100 nm. A post-deposition rapid thermal annealing (RTA) was utilized to optimize the sensing properties, and the sensitivity was increased to 51.07 mV/pH.

AB - Vertical silicon nanowire (SiNW) platforms are candidates for use in ultrasensitive biosensors, with surface-to-volume ratio higher than one-dimensional SiNW. In this paper, a vertical SiNW electrolyteinsulatorsemiconductor (EIS) structure with an ALD-HfO 2 sensing membrane is proposed for use in a hydrogen ion sensor. Hafnium dioxide is used as the sensing membrane, which was deposited on the surface of the vertical SiNW structure by atomic layer deposition. The sensing properties were examined using a HP4284A high-precision LCR analyzer. A linear relationship was found between the flatband voltage shift and the hydrogen ion concentration. Comparing with different diameters of SiNW, the sensitivity with diameter of 200 nm was slightly higher than 100 nm. A post-deposition rapid thermal annealing (RTA) was utilized to optimize the sensing properties, and the sensitivity was increased to 51.07 mV/pH.

KW - Silicon nanowire (SiNW)

KW - electrolyteinsulatorsemiconductor (EIS)

KW - rapid thermal annealing (RTA)

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U2 - 10.1142/S0219519411004897

DO - 10.1142/S0219519411004897

M3 - 文章

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SN - 0219-5194

VL - 11

SP - 959

EP - 966

JO - Journal of Mechanics in Medicine and Biology

JF - Journal of Mechanics in Medicine and Biology

IS - 5

ER -

Vertical silicon nanowires with atomic layer deposition with HfO ₂ membrane for pH sensing application

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Keywords

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