Very high density (44 fFμ m2) SrTiO3 MIM capacitors for RF applications

K. C. Chiang; J. W. Lin; H. C. Pan; C. N. Hsiao; W. J. Chen; H. L. Kao; I. J. Hsieh; Albert Chin

doi:10.1149/1.2431323

Very high density (44 fFμ m²) SrTiO₃ MIM capacitors for RF applications

K. C. Chiang^*, J. W. Lin, H. C. Pan, C. N. Hsiao, W. J. Chen, H. L. Kao, I. J. Hsieh, Albert Chin

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

12 Scopus citations

Abstract

We demonstrate a high-performance TaN SrTiO3 TaN metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fFμ m2, small voltage linearity α of 54 ppm V2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits.

Original language	English
Pages (from-to)	H214-H216
Journal	Journal of the Electrochemical Society
Volume	154
Issue number	3
DOIs	https://doi.org/10.1149/1.2431323
State	Published - 2007

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title = "Very high density (44 fFμ m2) SrTiO3 MIM capacitors for RF applications",

abstract = "We demonstrate a high-performance TaN SrTiO3 TaN metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fFμ m2, small voltage linearity α of 54 ppm V2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits.",

author = "Chiang, {K. C.} and Lin, {J. W.} and Pan, {H. C.} and Hsiao, {C. N.} and Chen, {W. J.} and Kao, {H. L.} and Hsieh, {I. J.} and Albert Chin",

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T1 - Very high density (44 fFμ m2) SrTiO3 MIM capacitors for RF applications

AU - Chiang, K. C.

AU - Lin, J. W.

AU - Pan, H. C.

AU - Hsiao, C. N.

AU - Chen, W. J.

AU - Kao, H. L.

AU - Hsieh, I. J.

AU - Chin, Albert

PY - 2007

Y1 - 2007

N2 - We demonstrate a high-performance TaN SrTiO3 TaN metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fFμ m2, small voltage linearity α of 54 ppm V2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits.

AB - We demonstrate a high-performance TaN SrTiO3 TaN metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fFμ m2, small voltage linearity α of 54 ppm V2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits.

UR - http://www.scopus.com/inward/record.url?scp=33846982265&partnerID=8YFLogxK

U2 - 10.1149/1.2431323

DO - 10.1149/1.2431323

M3 - 文章

AN - SCOPUS:33846982265

SN - 0013-4651

VL - 154

SP - H214-H216

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Very high density (44 fFμ m²) SrTiO₃ MIM capacitors for RF applications

Abstract

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