Very high density (44 fFμ m2) SrTiO3 MIM capacitors for RF applications

K. C. Chiang; J. W. Lin; H. C. Pan; C. N. Hsiao; W. J. Chen; H. L. Kao; I. J. Hsieh; Albert Chin

doi:10.1149/1.2431323

Very high density (44 fFμ m²) SrTiO₃ MIM capacitors for RF applications

K. C. Chiang^*
, J. W. Lin
, H. C. Pan
, C. N. Hsiao
, W. J. Chen
, H. L. Kao
, I. J. Hsieh
, Albert Chin

^*Corresponding author for this work

Department of Electronic Engineering

National Yang Ming Chiao Tung University
Chung Hua University
National Applied Research Laboratories Taiwan
National Pingtung University of Science and Technology
The Electrochemical Society

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

We demonstrate a high-performance TaN SrTiO3 TaN metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fFμ m2, small voltage linearity α of 54 ppm V2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits.

Original language	English
Pages (from-to)	H214-H216
Journal	Journal of the Electrochemical Society
Volume	154
Issue number	3
DOIs	https://doi.org/10.1149/1.2431323
State	Published - 2007

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title = "Very high density (44 fFμ m2) SrTiO3 MIM capacitors for RF applications",

abstract = "We demonstrate a high-performance TaN SrTiO3 TaN metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fFμ m2, small voltage linearity α of 54 ppm V2 at 2 GHz, and a small capacitance reduction 3.5\% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits.",

author = "Chiang, \{K. C.\} and Lin, \{J. W.\} and Pan, \{H. C.\} and Hsiao, \{C. N.\} and Chen, \{W. J.\} and Kao, \{H. L.\} and Hsieh, \{I. J.\} and Albert Chin",

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T1 - Very high density (44 fFμ m2) SrTiO3 MIM capacitors for RF applications

AU - Chiang, K. C.

AU - Lin, J. W.

AU - Pan, H. C.

AU - Hsiao, C. N.

AU - Chen, W. J.

AU - Kao, H. L.

AU - Hsieh, I. J.

AU - Chin, Albert

PY - 2007

Y1 - 2007

N2 - We demonstrate a high-performance TaN SrTiO3 TaN metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fFμ m2, small voltage linearity α of 54 ppm V2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits.

AB - We demonstrate a high-performance TaN SrTiO3 TaN metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fFμ m2, small voltage linearity α of 54 ppm V2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits.

UR - https://www.scopus.com/pages/publications/33846982265

U2 - 10.1149/1.2431323

DO - 10.1149/1.2431323

M3 - 文章

AN - SCOPUS:33846982265

SN - 0013-4651

VL - 154

SP - H214-H216

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Very high density (44 fFμ m²) SrTiO₃ MIM capacitors for RF applications

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