Very high density RF MIM capacitor compatible with VLSI

K. C. Chiang; C. H. Lai; Albert Chin; H. L. Kao; S. P. McAlister; C. C. Chi

doi:10.1109/MWSYM.2005.1516582

Very high density RF MIM capacitor compatible with VLSI

K. C. Chiang^*
, C. H. Lai
, Albert Chin
, H. L. Kao
, S. P. McAlister
, C. C. Chi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

We have fabricated RF MEM capacitors, using high-κ TiTaO as the dielectric, which show a record high density of 20 fF/μm ². In addition, the capacitors display a small capacitance reduction of only 3.6% over the 100 kHz to 20 GHz range, a low leakage current of 8 pF and a high Q of 120. This was for a typical large 8 pF TiTaO MIM capacitor. The small voltage dependence of the capacitance (ΔC/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits.

Original language	English
Title of host publication	2005 IEEE MTT-S International Microwave Symposium Digest
Pages	287-290
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2005.1516582
State	Published - 2005
Externally published	Yes
Event	2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States Duration: 12 06 2005 → 17 06 2005

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2005
ISSN (Print)	0149-645X

Conference

Conference	2005 IEEE MTT-S International Microwave Symposium
Country/Territory	United States
City	Long Beach, CA
Period	12/06/05 → 17/06/05

Keywords

Capacitor
MIM
RF
TiTaO

Access to Document

10.1109/MWSYM.2005.1516582

Cite this

@inproceedings{b59ad97d3db541e4b1c6f74012a8c677,

title = "Very high density RF MIM capacitor compatible with VLSI",

abstract = "We have fabricated RF MEM capacitors, using high-κ TiTaO as the dielectric, which show a record high density of 20 fF/μm 2. In addition, the capacitors display a small capacitance reduction of only 3.6\% over the 100 kHz to 20 GHz range, a low leakage current of 8 pF and a high Q of 120. This was for a typical large 8 pF TiTaO MIM capacitor. The small voltage dependence of the capacitance (ΔC/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits.",

keywords = "Capacitor, MIM, RF, TiTaO",

author = "Chiang, \{K. C.\} and Lai, \{C. H.\} and Albert Chin and Kao, \{H. L.\} and McAlister, \{S. P.\} and Chi, \{C. C.\}",

year = "2005",

doi = "10.1109/MWSYM.2005.1516582",

language = "英语",

isbn = "0780388461",

series = "IEEE MTT-S International Microwave Symposium Digest",

pages = "287--290",

booktitle = "2005 IEEE MTT-S International Microwave Symposium Digest",

note = "2005 IEEE MTT-S International Microwave Symposium ; Conference date: 12-06-2005 Through 17-06-2005",

}

Chiang, KC, Lai, CH, Chin, A, Kao, HL, McAlister, SP & Chi, CC 2005, Very high density RF MIM capacitor compatible with VLSI. in 2005 IEEE MTT-S International Microwave Symposium Digest., 1516582, IEEE MTT-S International Microwave Symposium Digest, vol. 2005, pp. 287-290, 2005 IEEE MTT-S International Microwave Symposium, Long Beach, CA, United States, 12/06/05. https://doi.org/10.1109/MWSYM.2005.1516582

TY - GEN

T1 - Very high density RF MIM capacitor compatible with VLSI

AU - Chiang, K. C.

AU - Lai, C. H.

AU - Chin, Albert

AU - Kao, H. L.

AU - McAlister, S. P.

AU - Chi, C. C.

PY - 2005

Y1 - 2005

N2 - We have fabricated RF MEM capacitors, using high-κ TiTaO as the dielectric, which show a record high density of 20 fF/μm 2. In addition, the capacitors display a small capacitance reduction of only 3.6% over the 100 kHz to 20 GHz range, a low leakage current of 8 pF and a high Q of 120. This was for a typical large 8 pF TiTaO MIM capacitor. The small voltage dependence of the capacitance (ΔC/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits.

AB - We have fabricated RF MEM capacitors, using high-κ TiTaO as the dielectric, which show a record high density of 20 fF/μm 2. In addition, the capacitors display a small capacitance reduction of only 3.6% over the 100 kHz to 20 GHz range, a low leakage current of 8 pF and a high Q of 120. This was for a typical large 8 pF TiTaO MIM capacitor. The small voltage dependence of the capacitance (ΔC/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits.

KW - Capacitor

KW - MIM

KW - RF

KW - TiTaO

UR - https://www.scopus.com/pages/publications/33748365065

U2 - 10.1109/MWSYM.2005.1516582

DO - 10.1109/MWSYM.2005.1516582

M3 - 会议稿件

AN - SCOPUS:33748365065

SN - 0780388461

SN - 9780780388468

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 287

EP - 290

BT - 2005 IEEE MTT-S International Microwave Symposium Digest

T2 - 2005 IEEE MTT-S International Microwave Symposium

Y2 - 12 June 2005 through 17 June 2005

ER -

Very high density RF MIM capacitor compatible with VLSI

Abstract

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Conference

Keywords

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