@inproceedings{7097bd23af844cfe9b05b505d211fb7c,
title = "Very low noise in 90nm node RF MOSFETs using a new layout",
abstract = "We have directly measured a record low minimum noise figure (NF min) of 0.46 dB at 10 GHz, along with a high 16.6 dB Associated Gain, in an 8-finger 90 nm node MOSFET (LG = 65nm) without de-embedding. At 18 GHz, NFmin was 0.83 dB with 13.5 dB gain. This was achieved using a microstrip line layout to screen the RF noise generated by the lossy substrate.",
keywords = "Associated gain, MOSFET, RF noise, f",
author = "Kao, {H. L.} and Albert Chin and Liao, {C. C.} and McAlister, {S. P.}",
year = "2007",
doi = "10.1109/SMIC.2007.322765",
language = "英语",
isbn = "0780397649",
series = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07",
pages = "44--47",
booktitle = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07",
note = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 ; Conference date: 10-01-2007 Through 12-01-2007",
}