Very low noise in 90nm node RF MOSFETs using a new layout

H. L. Kao*, Albert Chin, C. C. Liao, S. P. McAlister

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We have directly measured a record low minimum noise figure (NF min) of 0.46 dB at 10 GHz, along with a high 16.6 dB Associated Gain, in an 8-finger 90 nm node MOSFET (LG = 65nm) without de-embedding. At 18 GHz, NFmin was 0.83 dB with 13.5 dB gain. This was achieved using a microstrip line layout to screen the RF noise generated by the lossy substrate.

Original languageEnglish
Title of host publication2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Pages44-47
Number of pages4
DOIs
StatePublished - 2007
Event2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States
Duration: 10 01 200712 01 2007

Publication series

Name2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Conference

Conference2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Country/TerritoryUnited States
CityLong Beach, CA
Period10/01/0712/01/07

Keywords

  • Associated gain
  • MOSFET
  • RF noise
  • f

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