Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer

H. L. Kao; B. F. Hung; Albert Chin; J. M. Lai; C. F. Lee; S. P. McAlister; C. C. Chi

doi:10.1109/LMWC.2005.858999

Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer

H. L. Kao^*
, B. F. Hung
, Albert Chin
, J. M. Lai
, C. F. Lee
, S. P. McAlister
, C. C. Chi

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

A very low minimum noise figure (N F_min) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (∼ 30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB N F_min and a 13.7-dB associated gain. Thesmall RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.

Original language	English
Pages (from-to)	757-759
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	15
Issue number	11
DOIs	https://doi.org/10.1109/LMWC.2005.858999
State	Published - 11 2005
Externally published	Yes

Keywords

Associated gain
Metal-oxide semiconductor field-effect transistor (MOSFET)
Minimum noise figure
Plastic
Radio frequency (RF)

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10.1109/LMWC.2005.858999

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@article{afa15a53455344aabe216c5ef0370bcc,

title = "Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer",

abstract = "A very low minimum noise figure (N Fmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (∼ 30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB N Fmin and a 13.7-dB associated gain. Thesmall RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.",

keywords = "Associated gain, Metal-oxide semiconductor field-effect transistor (MOSFET), Minimum noise figure, Plastic, Radio frequency (RF)",

author = "Kao, \{H. L.\} and Hung, \{B. F.\} and Albert Chin and Lai, \{J. M.\} and Lee, \{C. F.\} and McAlister, \{S. P.\} and Chi, \{C. C.\}",

year = "2005",

month = nov,

doi = "10.1109/LMWC.2005.858999",

language = "英语",

volume = "15",

pages = "757--759",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer

AU - Kao, H. L.

AU - Hung, B. F.

AU - Chin, Albert

AU - Lai, J. M.

AU - Lee, C. F.

AU - McAlister, S. P.

AU - Chi, C. C.

PY - 2005/11

Y1 - 2005/11

N2 - A very low minimum noise figure (N Fmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (∼ 30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB N Fmin and a 13.7-dB associated gain. Thesmall RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.

AB - A very low minimum noise figure (N Fmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (∼ 30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB N Fmin and a 13.7-dB associated gain. Thesmall RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.

KW - Associated gain

KW - Metal-oxide semiconductor field-effect transistor (MOSFET)

KW - Minimum noise figure

KW - Plastic

KW - Radio frequency (RF)

UR - https://www.scopus.com/pages/publications/28744453254

U2 - 10.1109/LMWC.2005.858999

DO - 10.1109/LMWC.2005.858999

M3 - 文章

AN - SCOPUS:28744453254

SN - 1531-1309

VL - 15

SP - 757

EP - 759

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 11

ER -

Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer

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Keywords

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