@inproceedings{881c6f058da241fe9488c1c6cdb3a17b,
title = "Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention",
abstract = "At 85°C under very low ± 8V and fast 100μs P/E, good memory device integrity of 2.5V initial AVth and 1.45V 10-year extrapolated retention are obtained. This was achieved in SiO2/HfON/HfAlO/TaN MONOS using very high-K (∼22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125°C.",
author = "Lai, {C. H.} and Albert Chin and Kao, {H. L.} and Chen, {K. M.} and M. Hong and J. Kwo and Chi, {C. C.}",
year = "2006",
language = "英语",
isbn = "1424400058",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "44--45",
booktitle = "2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers",
note = "2006 Symposium on VLSI Technology, VLSIT ; Conference date: 13-06-2006 Through 15-06-2006",
}