Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention

C. H. Lai; Albert Chin; H. L. Kao; K. M. Chen; M. Hong; J. Kwo; C. C. Chi

Very low voltage SiO₂/HfON/HfAlO/TaN memory with fast speed and good retention

C. H. Lai
, Albert Chin
, H. L. Kao
, K. M. Chen
, M. Hong
, J. Kwo
, C. C. Chi

National Yang Ming Chiao Tung University
Dept. of Material Science Eng.
National Tsing Hua University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

42 Scopus citations

Abstract

At 85°C under very low ± 8V and fast 100μs P/E, good memory device integrity of 2.5V initial AVth and 1.45V 10-year extrapolated retention are obtained. This was achieved in SiO₂/HfON/HfAlO/TaN MONOS using very high-K (∼22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125°C.

Original language	English
Title of host publication	2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages	44-45
Number of pages	2
State	Published - 2006
Externally published	Yes
Event	2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States Duration: 13 06 2006 → 15 06 2006

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	2006 Symposium on VLSI Technology, VLSIT
Country/Territory	United States
City	Honolulu, HI
Period	13/06/06 → 15/06/06

Cite this

@inproceedings{881c6f058da241fe9488c1c6cdb3a17b,

title = "Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention",

abstract = "At 85°C under very low ± 8V and fast 100μs P/E, good memory device integrity of 2.5V initial AVth and 1.45V 10-year extrapolated retention are obtained. This was achieved in SiO2/HfON/HfAlO/TaN MONOS using very high-K (∼22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125°C.",

author = "Lai, \{C. H.\} and Albert Chin and Kao, \{H. L.\} and Chen, \{K. M.\} and M. Hong and J. Kwo and Chi, \{C. C.\}",

year = "2006",

language = "英语",

isbn = "1424400058",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "44--45",

booktitle = "2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers",

note = "2006 Symposium on VLSI Technology, VLSIT ; Conference date: 13-06-2006 Through 15-06-2006",

}

Lai, CH, Chin, A, Kao, HL, Chen, KM, Hong, M, Kwo, J & Chi, CC 2006, Very low voltage SiO₂/HfON/HfAlO/TaN memory with fast speed and good retention. in 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers., 1705208, Digest of Technical Papers - Symposium on VLSI Technology, pp. 44-45, 2006 Symposium on VLSI Technology, VLSIT, Honolulu, HI, United States, 13/06/06.

Very low voltage SiO₂/HfON/HfAlO/TaN memory with fast speed and good retention. / Lai, C. H.; Chin, Albert; Kao, H. L. et al.
2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. 2006. p. 44-45 1705208 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention

AU - Lai, C. H.

AU - Chin, Albert

AU - Kao, H. L.

AU - Chen, K. M.

AU - Hong, M.

AU - Kwo, J.

AU - Chi, C. C.

PY - 2006

Y1 - 2006

N2 - At 85°C under very low ± 8V and fast 100μs P/E, good memory device integrity of 2.5V initial AVth and 1.45V 10-year extrapolated retention are obtained. This was achieved in SiO2/HfON/HfAlO/TaN MONOS using very high-K (∼22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125°C.

AB - At 85°C under very low ± 8V and fast 100μs P/E, good memory device integrity of 2.5V initial AVth and 1.45V 10-year extrapolated retention are obtained. This was achieved in SiO2/HfON/HfAlO/TaN MONOS using very high-K (∼22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125°C.

UR - https://www.scopus.com/pages/publications/41149145759

M3 - 会议稿件

AN - SCOPUS:41149145759

SN - 1424400058

SN - 9781424400058

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 44

EP - 45

BT - 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers

T2 - 2006 Symposium on VLSI Technology, VLSIT

Y2 - 13 June 2006 through 15 June 2006

ER -

Very low voltage SiO₂/HfON/HfAlO/TaN memory with fast speed and good retention

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