Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers

Yi Qian; Zuhua Zhu; Yu Hwa Lo; Hong Q. Hou; B. E. Hammons; Diana L. Huffaker; Dennis G. Deppe; Wei Lin; M. C. Wang; Y. K. Yu

Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers

Yi Qian^*
, Zuhua Zhu
, Yu Hwa Lo
, Hong Q. Hou
, B. E. Hammons
, Diana L. Huffaker
, Dennis G. Deppe
, Wei Lin
, M. C. Wang
, Y. K. Yu

^*Corresponding author for this work

Cornell University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Wafer-bonded AlAs/GaAs mirrors and AlGaInAs strain- compensated multiple quantum well active layers have been applied into 1.3 micrometer vertical-cavity surface-emitting lasers (VCSELs). Double-bonded 1.3 micrometer VCSELs have operated at room temperature pulsed conditions with a high output power of 4.6 mW, a high characteristic temperature of 132 K, and a large side-mode suppression-ratio of 42 dB. A novel more practical approach for 1.3 micrometer VCSELs have been proposed and demonstrated a very low room temperature pulsed threshold current density of 1.13 kA/cm² and a very low threshold current of 2 mA. Further improvement focusing on practical approaches for long wavelength VCSELs is underway.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Kent D. Choquette, Dennis G. Deppe
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	161-168
Number of pages	8
ISBN (Print)	0819424145
State	Published - 1997
Externally published	Yes
Event	Vertical-Cavity Surface-Emitting Lasers - San Jose, CA, USA Duration: 13 02 1997 → 14 02 1997

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3003
ISSN (Print)	0277-786X

Conference

Conference	Vertical-Cavity Surface-Emitting Lasers
City	San Jose, CA, USA
Period	13/02/97 → 14/02/97

Cite this

Qian, Y., Zhu, Z., Lo, Y. H., Hou, H. Q., Hammons, B. E., Huffaker, D. L., Deppe, D. G., Lin, W., Wang, M. C., & Yu, Y. K. (1997). Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers. In K. D. Choquette, & D. G. Deppe (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 161-168). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 3003). Society of Photo-Optical Instrumentation Engineers.

Qian, Yi ; Zhu, Zuhua ; Lo, Yu Hwa et al. / Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers. Proceedings of SPIE - The International Society for Optical Engineering. editor / Kent D. Choquette ; Dennis G. Deppe. Society of Photo-Optical Instrumentation Engineers, 1997. pp. 161-168 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{a1c9dec0787547b39c22305d2ba461d4,

title = "Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers",

abstract = "Wafer-bonded AlAs/GaAs mirrors and AlGaInAs strain- compensated multiple quantum well active layers have been applied into 1.3 micrometer vertical-cavity surface-emitting lasers (VCSELs). Double-bonded 1.3 micrometer VCSELs have operated at room temperature pulsed conditions with a high output power of 4.6 mW, a high characteristic temperature of 132 K, and a large side-mode suppression-ratio of 42 dB. A novel more practical approach for 1.3 micrometer VCSELs have been proposed and demonstrated a very low room temperature pulsed threshold current density of 1.13 kA/cm2 and a very low threshold current of 2 mA. Further improvement focusing on practical approaches for long wavelength VCSELs is underway.",

author = "Yi Qian and Zuhua Zhu and Lo, \{Yu Hwa\} and Hou, \{Hong Q.\} and Hammons, \{B. E.\} and Huffaker, \{Diana L.\} and Deppe, \{Dennis G.\} and Wei Lin and Wang, \{M. C.\} and Yu, \{Y. K.\}",

year = "1997",

language = "英语",

isbn = "0819424145",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

pages = "161--168",

editor = "Choquette, \{Kent D.\} and Deppe, \{Dennis G.\}",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Vertical-Cavity Surface-Emitting Lasers ; Conference date: 13-02-1997 Through 14-02-1997",

}

Qian, Y, Zhu, Z, Lo, YH, Hou, HQ, Hammons, BE, Huffaker, DL, Deppe, DG, Lin, W, Wang, MC & Yu, YK 1997, Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers. in KD Choquette & DG Deppe (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 3003, Society of Photo-Optical Instrumentation Engineers, pp. 161-168, Vertical-Cavity Surface-Emitting Lasers, San Jose, CA, USA, 13/02/97.

Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers. / Qian, Yi; Zhu, Zuhua; Lo, Yu Hwa et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Kent D. Choquette; Dennis G. Deppe. Society of Photo-Optical Instrumentation Engineers, 1997. p. 161-168 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 3003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers

AU - Qian, Yi

AU - Zhu, Zuhua

AU - Lo, Yu Hwa

AU - Hou, Hong Q.

AU - Hammons, B. E.

AU - Huffaker, Diana L.

AU - Deppe, Dennis G.

AU - Lin, Wei

AU - Wang, M. C.

AU - Yu, Y. K.

PY - 1997

Y1 - 1997

N2 - Wafer-bonded AlAs/GaAs mirrors and AlGaInAs strain- compensated multiple quantum well active layers have been applied into 1.3 micrometer vertical-cavity surface-emitting lasers (VCSELs). Double-bonded 1.3 micrometer VCSELs have operated at room temperature pulsed conditions with a high output power of 4.6 mW, a high characteristic temperature of 132 K, and a large side-mode suppression-ratio of 42 dB. A novel more practical approach for 1.3 micrometer VCSELs have been proposed and demonstrated a very low room temperature pulsed threshold current density of 1.13 kA/cm2 and a very low threshold current of 2 mA. Further improvement focusing on practical approaches for long wavelength VCSELs is underway.

AB - Wafer-bonded AlAs/GaAs mirrors and AlGaInAs strain- compensated multiple quantum well active layers have been applied into 1.3 micrometer vertical-cavity surface-emitting lasers (VCSELs). Double-bonded 1.3 micrometer VCSELs have operated at room temperature pulsed conditions with a high output power of 4.6 mW, a high characteristic temperature of 132 K, and a large side-mode suppression-ratio of 42 dB. A novel more practical approach for 1.3 micrometer VCSELs have been proposed and demonstrated a very low room temperature pulsed threshold current density of 1.13 kA/cm2 and a very low threshold current of 2 mA. Further improvement focusing on practical approaches for long wavelength VCSELs is underway.

UR - https://www.scopus.com/pages/publications/0031377743

M3 - 会议稿件

AN - SCOPUS:0031377743

SN - 0819424145

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 161

EP - 168

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Choquette, Kent D.

A2 - Deppe, Dennis G.

PB - Society of Photo-Optical Instrumentation Engineers

T2 - Vertical-Cavity Surface-Emitting Lasers

Y2 - 13 February 1997 through 14 February 1997

ER -

Qian Y, Zhu Z, Lo YH, Hou HQ, Hammons BE, Huffaker DL et al. Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers. In Choquette KD, Deppe DG, editors, Proceedings of SPIE - The International Society for Optical Engineering. Society of Photo-Optical Instrumentation Engineers. 1997. p. 161-168. (Proceedings of SPIE - The International Society for Optical Engineering).

Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers

Abstract

Publication series

Conference

Other files and links

Fingerprint

Cite this