Wideband low-noise amplifier by LC load-reusing technique

J. Y. Hsieh; T. Wang; S. S. Lu

doi:10.1049/el.2009.3052

Wideband low-noise amplifier by LC load-reusing technique

J. Y. Hsieh^*, T. Wang, S. S. Lu

^*Corresponding author for this work

National Taiwan University

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

A wideband LNA (2.4-6 GHz) is realised in 0.18 um CMOS technology by adopting a unique LC load-reusing technique. The LC load at the output is transformed into a series LC circuit at the input, leading to an extension of the matching bandwidth (4.8 GHz). The NF shows an extremely flat frequency response within 0.2 dB difference around 2.7 dB over the band of interest. A linearisation technique is also utilised to improve the input third-order intercept point (IIP₃) ranging from -1.9 to -3.9 dBm.

Original language	English
Pages (from-to)	1280-1281
Number of pages	2
Journal	Electronics Letters
Volume	45
Issue number	25
DOIs	https://doi.org/10.1049/el.2009.3052
State	Published - 2009
Externally published	Yes

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10.1049/el.2009.3052

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abstract = "A wideband LNA (2.4-6 GHz) is realised in 0.18 um CMOS technology by adopting a unique LC load-reusing technique. The LC load at the output is transformed into a series LC circuit at the input, leading to an extension of the matching bandwidth (4.8 GHz). The NF shows an extremely flat frequency response within 0.2 dB difference around 2.7 dB over the band of interest. A linearisation technique is also utilised to improve the input third-order intercept point (IIP3) ranging from -1.9 to -3.9 dBm.",

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AB - A wideband LNA (2.4-6 GHz) is realised in 0.18 um CMOS technology by adopting a unique LC load-reusing technique. The LC load at the output is transformed into a series LC circuit at the input, leading to an extension of the matching bandwidth (4.8 GHz). The NF shows an extremely flat frequency response within 0.2 dB difference around 2.7 dB over the band of interest. A linearisation technique is also utilised to improve the input third-order intercept point (IIP3) ranging from -1.9 to -3.9 dBm.

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Wideband low-noise amplifier by LC load-reusing technique

Abstract

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