Yb2o3 thin films as a sensing membrane for pH-ISFET application

Tung Ming Pan*, Chih Hung Cheng, Cheng Da Lee

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

33 Scopus citations

Abstract

This paper describes the physical properties and sensing characteristics of Yb2O3 sensing membranes grown on Si(100) substrates by reactive sputtering. The structural and morphological features of these films with annealing at various temperatures were studied by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy. We found that Yb 2O3 films annealed at 800°C exhibit a high sensitivity of 55.5 mVpH, a low hysteresis voltage of 3.76 mV, and a small drift rate of 1.54 mVh. The good performance resulting from this annealing condition can be ascribed to the well-crystallized Yb2O3 structure, the thin silica layer, and the large surface roughness.

Original languageEnglish
Pages (from-to)J108-J111
JournalJournal of the Electrochemical Society
Volume156
Issue number5
DOIs
StatePublished - 2009

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