Yield improvement of gadolinium oxide resistive switching memory with oxygen post-metallization annealing

Jer Chyi Wang; Chao Sung Lai; De Yuan Jian; Yu Ren Ye

doi:10.1109/ISNE.2013.6512376

Yield improvement of gadolinium oxide resistive switching memory with oxygen post-metallization annealing

Jer Chyi Wang, Chao Sung Lai, De Yuan Jian, Yu Ren Ye

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to conference › Conference Paper › peer-review

1 Scopus citations

Abstract

Different post-metallization annealing gas ambient has been performed in the gadolinium oxide resistive switching memories to enhance the fabrication yield. The superior memory properties such as the low set and reset voltages (-1.4 V and 2.1 V) and high resistance ratio (∼10⁴) are successfully achieved. With no degradation of the memory characteristics, the fabrication yield of the oxygen post-metallization annealed gadolinium oxide resistive switching memories can be increased to over 60% due to the sufficient mobile oxygen ions supplied in the gadolinium oxide layers.

Original language	English
Pages	393-395
Number of pages	3
DOIs	https://doi.org/10.1109/ISNE.2013.6512376
State	Published - 2013
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan Duration: 25 02 2013 → 26 02 2013

Conference

Conference	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	25/02/13 → 26/02/13

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10.1109/ISNE.2013.6512376

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title = "Yield improvement of gadolinium oxide resistive switching memory with oxygen post-metallization annealing",

abstract = "Different post-metallization annealing gas ambient has been performed in the gadolinium oxide resistive switching memories to enhance the fabrication yield. The superior memory properties such as the low set and reset voltages (-1.4 V and 2.1 V) and high resistance ratio (∼104) are successfully achieved. With no degradation of the memory characteristics, the fabrication yield of the oxygen post-metallization annealed gadolinium oxide resistive switching memories can be increased to over 60\% due to the sufficient mobile oxygen ions supplied in the gadolinium oxide layers.",

author = "Wang, \{Jer Chyi\} and Lai, \{Chao Sung\} and Jian, \{De Yuan\} and Ye, \{Yu Ren\}",

year = "2013",

doi = "10.1109/ISNE.2013.6512376",

language = "英语",

pages = "393--395",

note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

}

Yield improvement of gadolinium oxide resistive switching memory with oxygen post-metallization annealing. / Wang, Jer Chyi; Lai, Chao Sung; Jian, De Yuan et al.
2013. 393-395 Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

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AU - Wang, Jer Chyi

AU - Lai, Chao Sung

AU - Jian, De Yuan

AU - Ye, Yu Ren

PY - 2013

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N2 - Different post-metallization annealing gas ambient has been performed in the gadolinium oxide resistive switching memories to enhance the fabrication yield. The superior memory properties such as the low set and reset voltages (-1.4 V and 2.1 V) and high resistance ratio (∼104) are successfully achieved. With no degradation of the memory characteristics, the fabrication yield of the oxygen post-metallization annealed gadolinium oxide resistive switching memories can be increased to over 60% due to the sufficient mobile oxygen ions supplied in the gadolinium oxide layers.

AB - Different post-metallization annealing gas ambient has been performed in the gadolinium oxide resistive switching memories to enhance the fabrication yield. The superior memory properties such as the low set and reset voltages (-1.4 V and 2.1 V) and high resistance ratio (∼104) are successfully achieved. With no degradation of the memory characteristics, the fabrication yield of the oxygen post-metallization annealed gadolinium oxide resistive switching memories can be increased to over 60% due to the sufficient mobile oxygen ions supplied in the gadolinium oxide layers.

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DO - 10.1109/ISNE.2013.6512376

M3 - 论文

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T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

Yield improvement of gadolinium oxide resistive switching memory with oxygen post-metallization annealing

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