Zero interface dipole induced threshold voltage shift of HfO2/SiO2 gate dielectric stacks with NH3 plasma treatment

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2013
Event	Conference on “Insulating Films on Semiconductors” (INFOS), 2013 - Cracow, Poland Duration: 25 06 2013 → 28 06 2013

Conference	Conference on “Insulating Films on Semiconductors” (INFOS), 2013
Period	25/06/13 → 28/06/13

Cite this

@conference{cfd08c7c40344c1881fe4c41c91c64e0,

title = "Zero interface dipole induced threshold voltage shift of HfO2/SiO2 gate dielectric stacks with NH3 plasma treatment",

author = "Jer-Chyi Wang",

year = "2013",

language = "American English",

note = "Conference on “Insulating Films on Semiconductors” (INFOS), 2013 ; Conference date: 25-06-2013 Through 28-06-2013",

}