ZnO based thin-film transistor with high- κ gadolinium and praseodymium oxide as gate dielectric

Hsiang Chun Wang; Che Kai Lin; Hsien Chin Chiu; Kuang Po Hsueh

doi:10.1109/EDSSC.2009.5394282

ZnO based thin-film transistor with high- κ gadolinium and praseodymium oxide as gate dielectric

Hsiang Chun Wang^*, Che Kai Lin, Hsien Chin Chiu, Kuang Po Hsueh

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

In this work, we compare the electrical and radio frequency characteristics of top-gate ZnO TFTs with praseodymium oxide layer (Pr₂O ₃) and Gadolinium oxide layer (Gd₂O₃). The source/drain region ofZnO Thin-film transistor is treated by simple O ₂ plasma instead of complicated processes, such as ion implantation and activation. By O₂ plasma treatment, the source/drain series resistance successfully reduced. With Pr₂O₃ and Gd ₂O₃, high dielectric constant (high-x) insulator gate dielectrics, gate leakage current, On/OFF current ratio, and radio frequency performance successfully improved to their use for portable, battery powered, and circuit design applications. The coupling of the gate electric field is enhanced by using high-κ gate dielectrics.

Original language	English
Title of host publication	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Pages	205-208
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2009.5394282
State	Published - 2009
Event	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 - Xi'an, China Duration: 25 12 2009 → 27 12 2009

Publication series

Name	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

Conference

Conference	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Country/Territory	China
City	Xi'an
Period	25/12/09 → 27/12/09

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10.1109/EDSSC.2009.5394282

Cite this

Wang, H. C., Lin, C. K., Chiu, H. C., & Hsueh, K. P. (2009). ZnO based thin-film transistor with high- κ gadolinium and praseodymium oxide as gate dielectric. In 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 (pp. 205-208). Article 5394282 (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009). https://doi.org/10.1109/EDSSC.2009.5394282

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title = "ZnO based thin-film transistor with high- κ gadolinium and praseodymium oxide as gate dielectric",

abstract = "In this work, we compare the electrical and radio frequency characteristics of top-gate ZnO TFTs with praseodymium oxide layer (Pr2O 3) and Gadolinium oxide layer (Gd2O3). The source/drain region ofZnO Thin-film transistor is treated by simple O 2 plasma instead of complicated processes, such as ion implantation and activation. By O2 plasma treatment, the source/drain series resistance successfully reduced. With Pr2O3 and Gd 2O3, high dielectric constant (high-x) insulator gate dielectrics, gate leakage current, On/OFF current ratio, and radio frequency performance successfully improved to their use for portable, battery powered, and circuit design applications. The coupling of the gate electric field is enhanced by using high-κ gate dielectrics.",

author = "Wang, {Hsiang Chun} and Lin, {Che Kai} and Chiu, {Hsien Chin} and Hsueh, {Kuang Po}",

year = "2009",

doi = "10.1109/EDSSC.2009.5394282",

language = "英语",

isbn = "9781424442980",

series = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009",

pages = "205--208",

booktitle = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009",

note = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 ; Conference date: 25-12-2009 Through 27-12-2009",

}

Wang, HC, Lin, CK, Chiu, HC & Hsueh, KP 2009, ZnO based thin-film transistor with high- κ gadolinium and praseodymium oxide as gate dielectric. in 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009., 5394282, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, pp. 205-208, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, Xi'an, China, 25/12/09. https://doi.org/10.1109/EDSSC.2009.5394282

ZnO based thin-film transistor with high- κ gadolinium and praseodymium oxide as gate dielectric. / Wang, Hsiang Chun; Lin, Che Kai; Chiu, Hsien Chin et al.
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009. 2009. p. 205-208 5394282 (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - ZnO based thin-film transistor with high- κ gadolinium and praseodymium oxide as gate dielectric

AU - Wang, Hsiang Chun

AU - Lin, Che Kai

AU - Chiu, Hsien Chin

AU - Hsueh, Kuang Po

PY - 2009

Y1 - 2009

N2 - In this work, we compare the electrical and radio frequency characteristics of top-gate ZnO TFTs with praseodymium oxide layer (Pr2O 3) and Gadolinium oxide layer (Gd2O3). The source/drain region ofZnO Thin-film transistor is treated by simple O 2 plasma instead of complicated processes, such as ion implantation and activation. By O2 plasma treatment, the source/drain series resistance successfully reduced. With Pr2O3 and Gd 2O3, high dielectric constant (high-x) insulator gate dielectrics, gate leakage current, On/OFF current ratio, and radio frequency performance successfully improved to their use for portable, battery powered, and circuit design applications. The coupling of the gate electric field is enhanced by using high-κ gate dielectrics.

AB - In this work, we compare the electrical and radio frequency characteristics of top-gate ZnO TFTs with praseodymium oxide layer (Pr2O 3) and Gadolinium oxide layer (Gd2O3). The source/drain region ofZnO Thin-film transistor is treated by simple O 2 plasma instead of complicated processes, such as ion implantation and activation. By O2 plasma treatment, the source/drain series resistance successfully reduced. With Pr2O3 and Gd 2O3, high dielectric constant (high-x) insulator gate dielectrics, gate leakage current, On/OFF current ratio, and radio frequency performance successfully improved to their use for portable, battery powered, and circuit design applications. The coupling of the gate electric field is enhanced by using high-κ gate dielectrics.

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SN - 9781424442980

T3 - 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

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BT - 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

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Y2 - 25 December 2009 through 27 December 2009

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Wang HC, Lin CK, Chiu HC, Hsueh KP. ZnO based thin-film transistor with high- κ gadolinium and praseodymium oxide as gate dielectric. In 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009. 2009. p. 205-208. 5394282. (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009). doi: 10.1109/EDSSC.2009.5394282

ZnO based thin-film transistor with high- κ gadolinium and praseodymium oxide as gate dielectric

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