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查看斯高帕斯 (Scopus) 概要
王 哲麒
教授
,
電子工程學系(含學碩博士班)
https://orcid.org/0000-0002-1308-3197
電子郵件
D000003113
cgu.edu
tw
h-index
h10-index
h5-index
1503
引文
20
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
624
引文
14
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
236
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2002
2024
每年研究產出
概覽
指紋
網絡
研究計畫-專案
(31)
研究產出
(221)
相近領域學者
(6)
指導學生論文
(50)
指紋
查看啟用 Jer-Chyi Wang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Al2O3
5%
Annealing
35%
Application of Sensors
9%
Biosensor
6%
Capacitance
13%
Capacitor
5%
Cerium Oxide
6%
Characterization
21%
Charge Trapping
21%
Copolymer
13%
Density
19%
Devices
45%
Dielectric Material
55%
Durability
12%
Electrical Property
6%
Electrode
33%
Electrolyte
20%
Electronic Circuit
5%
Electronics
6%
Ferroelectric Material
6%
Field Effect Transistors
11%
Film
37%
Gadolinium
36%
Graphene
25%
Graphene Oxide
6%
Hafnium
7%
Ion Implantation
18%
Ion-Sensitive Field Effect Transistor
9%
Material
11%
Membrane
27%
Metal
25%
Metal-Oxide-Semiconductor Field-Effect Transistor
13%
Nanocrystalline Material
11%
Nanocrystals
45%
Nitride Compound
14%
Oxide
100%
Oxynitride
6%
Piezoelectricity
7%
Resistive Random-Access Memory
11%
Semiconductor Material
12%
Semiconductor Structure
11%
Sensor
38%
Silicon
11%
Silicon Nitride
7%
Surface
19%
Temperature
26%
Thin Films
24%
Tungsten
6%
X-Ray Diffraction
6%
X-Ray Photoelectron Spectroscopy
8%
Engineering
Annealing
12%
Applications
35%
Atomic Layer Deposition
5%
Biosensor
5%
Cell Operation
5%
Characteristics
35%
Charge Storage
9%
Conduction Band
7%
Data Retention
7%
Detection
14%
Dielectrics
9%
Electric Potential
8%
Enhancement
5%
Field-Effect Transistor
11%
Flash Memory
10%
Fluorine Atom
6%
Gate Dielectric
22%
High Density
6%
High Sensitivity
5%
Implantation
8%
Interfacial Layer
8%
Linearity
5%
Losses
6%
Mechanisms
8%
Membrane
12%
Metal Gate
7%
Nanocrystal
17%
Nonvolatile Memory
18%
Oxide Layer
16%
Performance
18%
Plasma
37%
Plasma Treatment
23%
Polysilicon
5%
Potentiometric
6%
Pressure Probe
10%
Properties
9%
Rapid Thermal Annealing
16%
Reduction
5%
Reliability
11%
Resistive
16%
Semiconductor
12%
Sensing Membrane
24%
Sensor
7%
Substrates
12%
Surfaces
7%
Switching
14%
Thickness
8%
Thin Films
13%
Tunneling
11%
Windows
5%
Chemistry
Application
19%
Device
7%
Dielectric Material
10%
Electrolyte
10%
Electron Particle
6%
Energy
6%
Engineering Process
5%
Field Effect
9%
Gadolinium
11%
Graphene
7%
Hafnium
8%
Ion
15%
Ion Implantation
5%
Liquid Film
30%
Metal
8%
Nanomaterial
5%
Nitrogen
10%
Nonconductor
11%
Oxide
27%
Plasma
30%
Polarity
5%
Potentiometric Sensor
8%
Procedure
8%
Rate
5%
Reaction Mechanism
8%
Reaction Temperature
8%
Resistance
17%
Resistive Random-Access Memory
5%
Sample
7%
Semiconductor
14%
Sensor
15%
Silicon
6%
Silver
8%
Storage
6%
Structure
19%
Surface
7%
Thickness
7%
Time
10%
Tunneling
7%
Voltage
12%
