硫化處理應變式砷化鋁銦／砷化鎵銦異質接面場效應電晶體（ＭＨＥＭＴ）之方法

Engineering

• Transistor 100%
• Indium Gallium Arsenide 100%
• Applications 33%
• Density 33%
• Surfaces 33%
• Electric Potential 33%
• Surface State 33%
• High Current Density 33%
• Input Power 33%
• Inactivation 33%

Earth and Planetary Sciences

• High Electron Mobility Transistors 100%
• Vulcanisation 100%
• Utilization 33%
• Current Density 33%
• State 33%
• Input 33%
• High Current 33%
• Threshold Voltage 33%
• Deactivation 33%
• Invention 33%