0.2-μm gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

Hsien Chin Chiu*, Shih Cheng Yang, Cheng Kuo Lin, Ming Jyh Hwu, Yi Jen Chan

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

摘要

A C-band In0.49Ga0.51P-In0.15Ga 0.85As doped-channel FET (DCFET) monolithic power amplifier was designed and fabricated using low-k benzocyclobutene (BCB) interlayer technology. With a photosensitive low-k BCB interlayer (ε = 2.7), not only can the circuit's passivation layer, but also the capacitor insulator, via holes, and bridge process be realized simultaneously, where the process complexity and cost can be reduced. In addition, a 0.2-μm T-shaped gate InGaP-InGaAs doped-channel FET with a high current density and a high linearity is introduced to the amplifier using the e-beam lithography. This C-band power amplifier can achieve a linear power gain of 9.3 dB and an output power of 15.3 dBm, which proves that this novel MMIC process using low-k BCB interlayer technology is attractive for microwave and millimeter wave circuit applications.

原文英語
頁(從 - 到)1599-1603
頁數5
期刊IEEE Transactions on Electron Devices
50
發行號7
DOIs
出版狀態已出版 - 2003
對外發佈

指紋

深入研究「0.2-μm gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications」主題。共同形成了獨特的指紋。

引用此