摘要
1.55 μ.m InGaAsP/InP complex-coupled distributed feedback lasers with p-InGaAs absorptive grating were demonstrated. With coupling strength of 1.77, single mode yield more than 70 % and side mode suppression ratio as high as 43 dB above two times threshold current were achieved. It has been verified that the presence of gain-coupling strength can eliminate the mode degeneracy effectively.
原文 | 英語 |
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DOIs | |
出版狀態 | 已出版 - 1994 |
對外發佈 | 是 |
事件 | 1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, 台灣 持續時間: 12 07 1994 → 15 07 1994 |
Conference
Conference | 1994 International Electron Devices and Materials Symposium, EDMS 1994 |
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國家/地區 | 台灣 |
城市 | Hsinchu |
期間 | 12/07/94 → 15/07/94 |
文獻附註
Publisher Copyright:© 1994 IEEE.