1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

Xinke Liu; Feng Lin; Jian Li; Yuheng Lin; Junye Wu; Haofan Wang; Xiaohua Li; Shuangwu Huang; Qi Wang; Hsien Chin Chiu; Hao Chung Kuo

doi:10.1109/TED.2022.3153594

1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

Xinke Liu^*
, Feng Lin
, Jian Li
, Yuheng Lin
, Junye Wu
, Haofan Wang
, Xiaohua Li
, Shuangwu Huang
, Qi Wang
, Hsien Chin Chiu
, Hao Chung Kuo

^*此作品的通信作者

電子工程學系(含學碩博士班)

Shenzhen University
Peking University
National Yang Ming Chiao Tung University

研究成果: 期刊稿件 › 文章 › 同行評審

41 引文斯高帕斯（Scopus）

摘要

In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage VBR of the diodes. Under the same testing conditions, VBR was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential ON-resistance RON of 5.1 mΩ·cm2 and low turn-on voltage VON of 0.63 V. Given VON of < 0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest VBR in the reported work up to today.

原文	英語
頁（從 - 到）	1938-1944
頁數	7
期刊	IEEE Transactions on Electron Devices
卷	69
發行號	4
DOIs	https://doi.org/10.1109/TED.2022.3153594
出版狀態	已出版 - 01 04 2022

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Publisher Copyright:
© 1963-2012 IEEE.

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10.1109/TED.2022.3153594

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@article{496de486020c4748bf606f26b2f6ee0f,

title = "1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination",

abstract = "In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage VBR of the diodes. Under the same testing conditions, VBR was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential ON-resistance RON of 5.1 mΩ·cm2 and low turn-on voltage VON of 0.63 V. Given VON of < 0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest VBR in the reported work up to today.",

keywords = "Edge termination (ET), gallium nitride (GaN)-on-GaN, helium ion implantation, high breakdown voltage, low turn-on voltage",

author = "Xinke Liu and Feng Lin and Jian Li and Yuheng Lin and Junye Wu and Haofan Wang and Xiaohua Li and Shuangwu Huang and Qi Wang and Chiu, \{Hsien Chin\} and Kuo, \{Hao Chung\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2022",

month = apr,

day = "1",

doi = "10.1109/TED.2022.3153594",

language = "英语",

volume = "69",

pages = "1938--1944",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - 1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

AU - Liu, Xinke

AU - Lin, Feng

AU - Li, Jian

AU - Lin, Yuheng

AU - Wu, Junye

AU - Wang, Haofan

AU - Li, Xiaohua

AU - Huang, Shuangwu

AU - Wang, Qi

AU - Chiu, Hsien Chin

AU - Kuo, Hao Chung

PY - 2022/4/1

Y1 - 2022/4/1

N2 - In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage VBR of the diodes. Under the same testing conditions, VBR was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential ON-resistance RON of 5.1 mΩ·cm2 and low turn-on voltage VON of 0.63 V. Given VON of < 0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest VBR in the reported work up to today.

AB - In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage VBR of the diodes. Under the same testing conditions, VBR was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential ON-resistance RON of 5.1 mΩ·cm2 and low turn-on voltage VON of 0.63 V. Given VON of < 0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest VBR in the reported work up to today.

KW - Edge termination (ET)

KW - gallium nitride (GaN)-on-GaN

KW - helium ion implantation

KW - high breakdown voltage

KW - low turn-on voltage

UR - https://www.scopus.com/pages/publications/85126284184

U2 - 10.1109/TED.2022.3153594

DO - 10.1109/TED.2022.3153594

M3 - 文章

AN - SCOPUS:85126284184

SN - 0018-9383

VL - 69

SP - 1938

EP - 1944

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

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