跳至主導覽 跳至搜尋 跳過主要內容

50% PAE WCDMA basestation amplifier implemented with GaN HFETs

  • Don Kimball*
  • , Paul Draxler
  • , Jinho Jeong
  • , Chin Hsia
  • , Sandro Lanfranco
  • , Walter Nagy
  • , Kevin Linthicum
  • , Larry Larson
  • , Peter Asbeck
  • *此作品的通信作者
  • University of California at San Diego
  • Qualcomm Incorporated
  • Nokia
  • Nitronex Corporation

研究成果: 期刊稿件會議文章同行評審

34 引文 斯高帕斯(Scopus)

摘要

A high performance GaN HFET WCDMA basestation power amplifier is presented, which uses an envelope tracking bias system to achieve high linearity and efficiency. The measured overall power-added efficiency (PAE) reached 50.7 %, with a normalized power RMS error of 0.7% and ACLR of -52 dBc at an offset frequency of 5 MHz, at an average output power of 37.2 W and gain of 10.0 dB for a single carrier WCDMA signal. To the authors' knowledge, this corresponds to the best efficiency reported for a single stage base station power amplifier. Digital predistortion (DPD) was used at two levels: memoryless DPD to compensate for the expected gain variation of the amplifier over the bias envelope trajectory, and deterministic memory mitigation, to further improve the linearity. The signal envelope had a peak-to-average power ratio of 7.67 dB.

原文英語
文章編號LN.4
頁(從 - 到)89-92
頁數4
期刊Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
DOIs
出版狀態已出版 - 2005
對外發佈
事件2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC - Palm Springs, CA, 美國
持續時間: 30 10 200502 11 2005

指紋

深入研究「50% PAE WCDMA basestation amplifier implemented with GaN HFETs」主題。共同形成了獨特的指紋。

引用此