@inproceedings{f8dc602518404f6085e10b1b5fbf0a41,
title = "A Broadband stacked power amplifier using 2-μm GaAs HBT Process for C-band applications",
abstract = "A broadband stacked power amplifier using 2μm GaAs HBT process is presented in this paper for C-band applications. The PA is designed based on a dualstacked circuit topology including a common-emitter (CE) and a common-base (CB) amplifier. A maximum output power can be determined by an optimized based terminal capacitor of the CB amplifier. The PA demonstrates a broad bandwidth of 2.4 to 6 GHz, a small signal gain of higher than 10 dB, a saturation output power of 25 dBm, and a peak power added efficiency (PAE) of up to 42 \%.",
keywords = "GaAs, HBT, Power amplifier (PA), Stacked power amplifier",
author = "Shen, \{Chih Chun\} and Huang, \{Fan Hsiu\} and Lin, \{Cheng Kuo\} and Chang, \{Hong Yeh\} and Chan, \{Yi Jen\} and Wang, \{Yu Chi\}",
year = "2008",
doi = "10.1109/APMC.2008.4958388",
language = "英语",
isbn = "9781424426423",
series = "Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008",
booktitle = "Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008",
note = "2008 Asia Pacific Microwave Conference, APMC 2008 ; Conference date: 16-12-2008 Through 20-12-2008",
}