A CMOS-compatible, high RF power,Asymmetric-LDD MOSFET with excellent linearity

T. Chang*, H. L. Kao, Y. J. Chen, S. L. Liu, S. P. McAlister, Albert Chin

*此作品的通信作者

研究成果: 圖書/報告稿件的類型會議稿件同行評審

11 引文 斯高帕斯(Scopus)

摘要

We report the performance of 0.18 μm RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain(LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz fmax, and a good adjacent channel power ratio(ACPR) linearity, as well as a 52% drain efficiency at 2.4 GHz.

原文英語
主出版物標題2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
出版狀態已出版 - 2008
事件2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, 美國
持續時間: 15 12 200817 12 2008

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2008 IEEE International Electron Devices Meeting, IEDM 2008
國家/地區美國
城市San Francisco, CA
期間15/12/0817/12/08

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