TY - GEN
T1 - A differential difference amplifier for neural recording system with tunable low-frequency cutoff
AU - Yao, Kai Wen
AU - Lin, Wei Chih
AU - Gong, Cihun Siyong Alex
AU - Lin, Yu Ying
AU - Shiue, Muh Tian
PY - 2008
Y1 - 2008
N2 - This paper describes a low-noise and low-power architecture of the differential difference amplifier (DDA) for neural recording system. The proposed neural amplifier combines DC offset rejection and low-frequency cutoff tuning without off-chip components. DC offset rejection is carried out by ac coupling which is realized by series connection of a capacitor and a MOS-bipolar pseudoresistor. Low-frequency cutoff tuning permits recording local field potential or neural action potential. Frequency tuning mechanism depends on the feedback capacitor and floating tunable resistor which constructs a low frequency pole nearby 100 Hz. The proposed design is in TSMC 0.18 μm 1P6M CMOS process, which achieves gain of 40.8 dB, passband from 107 Hz to 10.3 kHz, input-referred noise of 4.83 μVrms, power consumption of 25.9 μW, and 0.084 mm2 of chip area.
AB - This paper describes a low-noise and low-power architecture of the differential difference amplifier (DDA) for neural recording system. The proposed neural amplifier combines DC offset rejection and low-frequency cutoff tuning without off-chip components. DC offset rejection is carried out by ac coupling which is realized by series connection of a capacitor and a MOS-bipolar pseudoresistor. Low-frequency cutoff tuning permits recording local field potential or neural action potential. Frequency tuning mechanism depends on the feedback capacitor and floating tunable resistor which constructs a low frequency pole nearby 100 Hz. The proposed design is in TSMC 0.18 μm 1P6M CMOS process, which achieves gain of 40.8 dB, passband from 107 Hz to 10.3 kHz, input-referred noise of 4.83 μVrms, power consumption of 25.9 μW, and 0.084 mm2 of chip area.
UR - https://www.scopus.com/pages/publications/63249119264
U2 - 10.1109/EDSSC.2008.4760720
DO - 10.1109/EDSSC.2008.4760720
M3 - 会议稿件
AN - SCOPUS:63249119264
SN - 9781424425402
T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Y2 - 8 December 2008 through 10 December 2008
ER -