@inproceedings{7100983cf5b547579d46b57f7881fef4,
title = "A high isolation 0.15μm depletion-mode pHEMT SPDT switch using field-plate technology",
abstract = "A high isolation GaAs microwave switch has been successfully developed using field-plate technology, which is effective to improve the isolation. The developed wideband SPDT switch shows a greater than 40 dB isolation before 10GHz and also achieves good performance at higher frequency. A GaAs-based pseudomorphic high electron mobility transistors (pHEMTs) in which the field-plate (FP) metal is supplied with various biases was developed and evaluated experimentally to determine their dc and rf performance. Owing to the depth modulation of the field-plate-induced depletion region at various field-plate biases, the intrinsic devices were influenced by the tunable V fp. This technique is easy to apply, based on standard pHEMT fabrication.",
keywords = "Field-Plate technology, High isolation, Millimeter-wave switch, pHEMT",
author = "Cheng, {Chia Shih} and Lin, {Shao Wei} and Wei, {Chien Cheng} and Chiu, {Hsien Chin} and Yang, {Rong Jyi}",
year = "2007",
doi = "10.1109/APMC.2007.4554849",
language = "英语",
isbn = "1424407494",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
booktitle = "2007 Asia-Pacific Microwave Conference, APMC",
note = "Asia-Pacific Microwave Conference, APMC 2007 ; Conference date: 11-12-2007 Through 14-12-2007",
}