A high-k Y2TiO5 charge trapping layer for high-density flash memory application

Tung Ming Pan; Wen Wei Yeh; Wei Tsung Chang; Kai Ming Chen; Jing Wei Chen; Kuo Chan Huang

doi:10.1109/ISDRS.2007.4422266

A high-k Y₂TiO₅ charge trapping layer for high-density flash memory application

Tung Ming Pan^*
, Wen Wei Yeh
, Wei Tsung Chang
, Kai Ming Chen
, Jing Wei Chen
, Kuo Chan Huang

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

原文	英語
主出版物標題	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422266
出版狀態	已出版 - 2007
事件	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, 美國持續時間: 12 12 2007 → 14 12 2007

出版系列

名字	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
國家/地區	美國
城市	College Park, MD
期間	12/12/07 → 14/12/07

存取文件

10.1109/ISDRS.2007.4422266

其它文件與鏈接

Link to publication in Scopus

引用此

@inproceedings{0b42d8b8cfc04e04b5f22172579d9ce7,

title = "A high-k Y2TiO5 charge trapping layer for high-density flash memory application",

author = "Pan, \{Tung Ming\} and Yeh, \{Wen Wei\} and Chang, \{Wei Tsung\} and Chen, \{Kai Ming\} and Chen, \{Jing Wei\} and Huang, \{Kuo Chan\}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422266",

language = "英语",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Pan, TM, Yeh, WW, Chang, WT, Chen, KM, Chen, JW & Huang, KC 2007, A high-k Y₂TiO₅ charge trapping layer for high-density flash memory application. 於 2007 International Semiconductor Device Research Symposium, ISDRS., 4422266, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, 美國, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422266

TY - GEN

T1 - A high-k Y2TiO5 charge trapping layer for high-density flash memory application

AU - Pan, Tung Ming

AU - Yeh, Wen Wei

AU - Chang, Wei Tsung

AU - Chen, Kai Ming

AU - Chen, Jing Wei

AU - Huang, Kuo Chan

PY - 2007

Y1 - 2007

UR - https://www.scopus.com/pages/publications/44949250087

U2 - 10.1109/ISDRS.2007.4422266

DO - 10.1109/ISDRS.2007.4422266

M3 - 会议稿件

AN - SCOPUS:44949250087

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -