A high output power V-band GaAs HEMT push-pull power amplifier using meandering baluns technology

A broadband, high saturation output power 0.15-μm gate length GaAs pseudomorphic high-electron mobility transistor push-pull V-band power amplifier has been demonstrated using meandering balun designs. Two meandering low-loss planar three-coupled-line baluns were used to form push-pull mechanism for both stages. The meandering baluns provide 180° differential outputs from the applied single-ended input at the V-band and the size was reduced for 23% compared to traditional design. The proposed push-pull amplifier achieved a peak small-signal gain of 16.8 dB at 58 GHz, a 3 dB bandwidth of 55-62 GHz, and a peak power added efficiency of 13.8%.