@inproceedings{186f0852c1e947eaa5398204f83ab5aa,
title = "A high protection voltage dual-gate GaN HEMT clamp for electric vehicle application",
abstract = "This study presents the development of a novel ESD protection clamp by using dual-gate GaN HEMT technology for electric vehicle application. The proposed novel clamp possesses a low on-state resistance, uniform parasitic capacitance, and 500V trigger voltage for high voltage supply ESD applications. Implementation of the GaN ESD clamp demonstrates a human body mode (HBM) ESD test voltage more than 13kV stress voltage. In addition, the incorporated clamps use a fewer number of diodes than the conventional diode stacks at the trigger terminal, thereby making it size efficient and low effort impedance matching co-design which allow this approach to be an attractive solution for ESD protection.",
keywords = "ESD, GaN, HEMT, clamp",
author = "Chiu, {Hsien Chin} and Cho, {Kuan Liang} and Peng, {Sheng Wen}",
year = "2011",
doi = "10.1109/EDSSC.2011.6117735",
language = "英语",
isbn = "9781457719974",
series = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",
booktitle = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",
note = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 ; Conference date: 17-11-2011 Through 18-11-2011",
}