A high protection voltage dual-gate GaN HEMT clamp for electric vehicle application

Hsien Chin Chiu*, Kuan Liang Cho, Sheng Wen Peng

*此作品的通信作者

研究成果: 圖書/報告稿件的類型會議稿件同行評審

5 引文 斯高帕斯(Scopus)

摘要

This study presents the development of a novel ESD protection clamp by using dual-gate GaN HEMT technology for electric vehicle application. The proposed novel clamp possesses a low on-state resistance, uniform parasitic capacitance, and 500V trigger voltage for high voltage supply ESD applications. Implementation of the GaN ESD clamp demonstrates a human body mode (HBM) ESD test voltage more than 13kV stress voltage. In addition, the incorporated clamps use a fewer number of diodes than the conventional diode stacks at the trigger terminal, thereby making it size efficient and low effort impedance matching co-design which allow this approach to be an attractive solution for ESD protection.

原文英語
主出版物標題2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
DOIs
出版狀態已出版 - 2011
事件2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 - Tianjin, 中國
持續時間: 17 11 201118 11 2011

出版系列

名字2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Conference

Conference2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
國家/地區中國
城市Tianjin
期間17/11/1118/11/11

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