A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

Woei Cherng Wu; Tien Sheng Chao; Wu Chin Peng; Wen Luh Yang; Jer Chyi Wang; Jian Hao Chen; Ming Wen Ma; Chao Sung Lai; Tsung Yu Yang; Tzu Ping Chen; Chien Hung Chen; Chih Hung Lin; Hwi Huang Chen; Joe Ko

doi:10.1109/VTSA.2007.378896

A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

Woei Cherng Wu^*, Tien Sheng Chao, Wu Chin Peng, Wen Luh Yang, Jer Chyi Wang, Jian Hao Chen, Ming Wen Ma, Chao Sung Lai, Tsung Yu Yang, Tzu Ping Chen, Chien Hung Chen, Chih Hung Lin, Hwi Huang Chen, Joe Ko

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well V_th distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.

原文	英語
主出版物標題	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VTSA.2007.378896
出版狀態	已出版 - 2007
事件	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, 台灣持續時間: 23 04 2007 → 25 04 2007

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
國家/地區	台灣
城市	Hsinchu
期間	23/04/07 → 25/04/07

存取文件

10.1109/VTSA.2007.378896

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Link to publication in Scopus

引用此

Wu, W. C., Chao, T. S., Peng, W. C., Yang, W. L., Wang, J. C., Chen, J. H., Ma, M. W., Lai, C. S., Yang, T. Y., Chen, T. P., Chen, C. H., Lin, C. H., Chen, H. H., & Ko, J. (2007). A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. 於 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers 文章 4239464 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378896

Wu, Woei Cherng ; Chao, Tien Sheng ; Peng, Wu Chin 等. / A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{f54dae6a5b8b412aa90d1fc2f24da5dc,

title = "A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness",

abstract = "High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.",

author = "Wu, \{Woei Cherng\} and Chao, \{Tien Sheng\} and Peng, \{Wu Chin\} and Yang, \{Wen Luh\} and Wang, \{Jer Chyi\} and Chen, \{Jian Hao\} and Ma, \{Ming Wen\} and Lai, \{Chao Sung\} and Yang, \{Tsung Yu\} and Chen, \{Tzu Ping\} and Chen, \{Chien Hung\} and Lin, \{Chih Hung\} and Chen, \{Hwi Huang\} and Joe Ko",

year = "2007",

doi = "10.1109/VTSA.2007.378896",

language = "英语",

isbn = "1424405858",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 23-04-2007 Through 25-04-2007",

}

Wu, WC, Chao, TS, Peng, WC, Yang, WL, Wang, JC, Chen, JH, Ma, MW, Lai, CS, Yang, TY, Chen, TP, Chen, CH, Lin, CH, Chen, HH & Ko, J 2007, A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. 於 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers., 4239464, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, 台灣, 23/04/07. https://doi.org/10.1109/VTSA.2007.378896

A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. / Wu, Woei Cherng; Chao, Tien Sheng; Peng, Wu Chin 等.
2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239464 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

AU - Wu, Woei Cherng

AU - Chao, Tien Sheng

AU - Peng, Wu Chin

AU - Yang, Wen Luh

AU - Wang, Jer Chyi

AU - Chen, Jian Hao

AU - Ma, Ming Wen

AU - Lai, Chao Sung

AU - Yang, Tsung Yu

AU - Chen, Tzu Ping

AU - Chen, Chien Hung

AU - Lin, Chih Hung

AU - Chen, Hwi Huang

AU - Ko, Joe

PY - 2007

Y1 - 2007

N2 - High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.

AB - High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.

UR - http://www.scopus.com/inward/record.url?scp=34548863353&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2007.378896

DO - 10.1109/VTSA.2007.378896

M3 - 会议稿件

AN - SCOPUS:34548863353

SN - 1424405858

SN - 9781424405855

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers

T2 - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 23 April 2007 through 25 April 2007

ER -

Wu WC, Chao TS, Peng WC, Yang WL, Wang JC, Chen JH 等. A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. 於 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239464. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2007.378896

A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

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