A low phase noise Ka-band voltage controlled oscillator using 0.15 μm GaAs pHEMT technology

H. L. Kao*, S. P. Shih, C. S. Yeh, L. C. Chang

*此作品的通信作者

研究成果: 圖書/報告稿件的類型會議稿件同行評審

2 引文 斯高帕斯(Scopus)

摘要

A low phase noise, low dissipated power and small sized Ka-band voltage-controlled oscillator (VCO), using dual cross-coupled pair configuration and capacitance-splitting technique is presented. The Ka-band VCO circuit uses 0.15 m GaAs pHEMT technology. The VCO has low phase noise, of 116.36 dBc/Hz, at a 1 MHz offset and can be tuned from 30.5 to 31.22 GHz. The figure of merit (FOM) is -192.36 dBc/Hz. The power consumption of the VCO with 1.04 mm 2 chip area was 24 mW, from a 1 V power supply.

原文英語
主出版物標題Proceedings of the 2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2012
頁面79-82
頁數4
DOIs
出版狀態已出版 - 2012
事件2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2012 - Tallinn, 愛沙尼亞
持續時間: 18 04 201220 04 2012

出版系列

名字Proceedings of the 2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2012

Conference

Conference2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2012
國家/地區愛沙尼亞
城市Tallinn
期間18/04/1220/04/12

指紋

深入研究「A low phase noise Ka-band voltage controlled oscillator using 0.15 μm GaAs pHEMT technology」主題。共同形成了獨特的指紋。

引用此