A novel p-n-diode structure of SONOS-type TFT NVM with embedded silicon nanocrystals

Tsung Yu Chiang; William Cheng Yu Ma; Yi Hong Wu; Kuan Ti Wang; Tien Sheng Chao

doi:10.1109/LED.2010.2064153

A novel p-n-diode structure of SONOS-type TFT NVM with embedded silicon nanocrystals

Tsung Yu Chiang^*
, William Cheng Yu Ma
, Yi Hong Wu
, Kuan Ti Wang
, Tien Sheng Chao

^*此作品的通信作者

National Yang Ming Chiao Tung University

研究成果: 期刊稿件 › 文章 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10 ^-7 A by the band-to-band tunneling current. A much larger memory window >12V) and good data retention time (10⁸s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.

原文	英語
文章編號	5565385
頁（從 - 到）	1239-1241
頁數	3
期刊	IEEE Electron Device Letters
卷	31
發行號	11
DOIs	https://doi.org/10.1109/LED.2010.2064153
出版狀態	已出版 - 11 2010
對外發佈	是

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@article{ed2e630165934ec29826a111a42b59ed,

title = "A novel p-n-diode structure of SONOS-type TFT NVM with embedded silicon nanocrystals",

abstract = "In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10 -7 A by the band-to-band tunneling current. A much larger memory window >12V) and good data retention time (108s for 12\% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.",

keywords = "Band-to-band tunneling (BTBT), nonvolatile memory (NVM), p-n diode (PND), silicon nanocrystal (Si-NC), thin-film transistor (TFT)",

author = "Chiang, \{Tsung Yu\} and Ma, \{William Cheng Yu\} and Wu, \{Yi Hong\} and Wang, \{Kuan Ti\} and Chao, \{Tien Sheng\}",

year = "2010",

month = nov,

doi = "10.1109/LED.2010.2064153",

language = "英语",

volume = "31",

pages = "1239--1241",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

TY - JOUR

T1 - A novel p-n-diode structure of SONOS-type TFT NVM with embedded silicon nanocrystals

AU - Chiang, Tsung Yu

AU - Ma, William Cheng Yu

AU - Wu, Yi Hong

AU - Wang, Kuan Ti

AU - Chao, Tien Sheng

PY - 2010/11

Y1 - 2010/11

N2 - In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10 -7 A by the band-to-band tunneling current. A much larger memory window >12V) and good data retention time (108s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.

AB - In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10 -7 A by the band-to-band tunneling current. A much larger memory window >12V) and good data retention time (108s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.

KW - Band-to-band tunneling (BTBT)

KW - nonvolatile memory (NVM)

KW - p-n diode (PND)

KW - silicon nanocrystal (Si-NC)

KW - thin-film transistor (TFT)

UR - https://www.scopus.com/pages/publications/78049288174

U2 - 10.1109/LED.2010.2064153

DO - 10.1109/LED.2010.2064153

M3 - 文章

AN - SCOPUS:78049288174

SN - 0741-3106

VL - 31

SP - 1239

EP - 1241

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 5565385

ER -

A novel p-n-diode structure of SONOS-type TFT NVM with embedded silicon nanocrystals

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