A novel program-erasable capacitor using high-κ AlN dielectric

C. H. Lai; M. W. Ma; C. F. Cheng; Albert Chin; S. P. McAlister; C. X. Zhu; M. F. Li; D. L. Kwong

doi:10.1109/DRC.2004.1367791

A novel program-erasable capacitor using high-κ AlN dielectric

C. H. Lai^*
, M. W. Ma
, C. F. Cheng
, Albert Chin
, S. P. McAlister
, C. X. Zhu
, M. F. Li
, D. L. Kwong

^*此作品的通信作者

National Yang Ming Chiao Tung University
National Research Council of Canada
National University of Singapore
University of Texas at Austin

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al₂O₃, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 10⁴s and shows potentially long memory time.

原文	英語
主出版物標題	Device Research Conference - Conference Digest, 62nd DRC
頁面	77-78
頁數	2
DOIs	https://doi.org/10.1109/DRC.2004.1367791
出版狀態	已出版 - 2004
對外發佈	是
事件	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, 美國持續時間: 21 06 2004 → 23 06 2004

出版系列

名字	Device Research Conference - Conference Digest, DRC
ISSN（列印）	1548-3770

Conference

Conference	Device Research Conference - Conference Digest, 62nd DRC
國家/地區	美國
城市	Notre Dame, IN
期間	21/06/04 → 23/06/04

存取文件

10.1109/DRC.2004.1367791

其它文件與鏈接

Link to publication in Scopus

引用此

@inproceedings{f449a1ef5f4647a9aad294869001b801,

title = "A novel program-erasable capacitor using high-κ AlN dielectric",

abstract = "We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.",

author = "Lai, \{C. H.\} and Ma, \{M. W.\} and Cheng, \{C. F.\} and Albert Chin and McAlister, \{S. P.\} and Zhu, \{C. X.\} and Li, \{M. F.\} and Kwong, \{D. L.\}",

year = "2004",

doi = "10.1109/DRC.2004.1367791",

language = "英语",

isbn = "0780382846",

series = "Device Research Conference - Conference Digest, DRC",

pages = "77--78",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

}

Lai, CH, Ma, MW, Cheng, CF, Chin, A, McAlister, SP, Zhu, CX, Li, MF & Kwong, DL 2004, A novel program-erasable capacitor using high-κ AlN dielectric. 於 Device Research Conference - Conference Digest, 62nd DRC., III.-13, Device Research Conference - Conference Digest, DRC, 頁 77-78, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, 美國, 21/06/04. https://doi.org/10.1109/DRC.2004.1367791

TY - GEN

T1 - A novel program-erasable capacitor using high-κ AlN dielectric

AU - Lai, C. H.

AU - Ma, M. W.

AU - Cheng, C. F.

AU - Chin, Albert

AU - McAlister, S. P.

AU - Zhu, C. X.

AU - Li, M. F.

AU - Kwong, D. L.

PY - 2004

Y1 - 2004

N2 - We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.

AB - We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.

UR - https://www.scopus.com/pages/publications/18044370451

U2 - 10.1109/DRC.2004.1367791

DO - 10.1109/DRC.2004.1367791

M3 - 会议稿件

AN - SCOPUS:18044370451

SN - 0780382846

T3 - Device Research Conference - Conference Digest, DRC

SP - 77

EP - 78

BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -

A novel program-erasable capacitor using high-κ AlN dielectric

摘要

出版系列

Conference

存取文件

其它文件與鏈接

指紋

引用此