@inproceedings{aa57355d33744314807f3d27423e442a,
title = "A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI",
abstract = "A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are generated by Fowler-Nordheim electron (FN-E) tunnel-injection, band-to-band tunneling induced hot-hole (BTBT-HH) injection, and carrier scattering/trapping/recombination via nitride traps. SiNLET with an effective device area of 0.616 μm2 is demonstrated for display and optical communication purposes.",
author = "Yeh, {C. C.} and Tsai, {W. J.} and Lu, {T. C.} and Chen, {Y. R.} and Pan, {F. M.} and Gu, {S. H.} and Liao, {Y. Y.} and Kao, {H. L.} and Ou, {T. F.} and Zous, {N. K.} and Ting, {Wen Chi} and Tahui Wang and Joseph Ku and Lu, {Chih Yuan}",
year = "2005",
language = "英语",
isbn = "078039268X",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "1013--1016",
booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",
note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",
}