A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology

Min Cheng Chen; Hou Yu Chen; Chia Yi Lin; Chuan Mei Tsai; Chung Fan Hsieh; Jim Tong Horng; Jian Tai Qiu; Chien Chao Huang; Fu Liang Yang

doi:10.1109/IEDM.2010.5703485

A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology

Min Cheng Chen^*
, Hou Yu Chen
, Chia Yi Lin
, Chuan Mei Tsai
, Chung Fan Hsieh
, Jim Tong Horng
, Jian Tai Qiu
, Chien Chao Huang
, Fu Liang Yang

^*此作品的通信作者

National Nano Device Laboratories Taiwan

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

For the first time, a novel smart biosensor with hybrid sensor/memory/CMOS poly-Si nanowire technology has been developed. Special designed oxide-nitride-oxide composite dielectric underneath 50nm nanowire realizes an electrically V_th-adjustable sensor to compensate device variation. The detections of pH, hydrogen peroxide and DNA are demonstrated using various functionalized receptors. A substrate-ionic coupling operation of the buried-channel field-effect sensor exhibits superior pH sensitivity (V ^th shift > 100mV/pH) beyond Nernst limitation. The built-in memory of nanowire devices possess steady electrically V^th adjustment (V^th programming/erasing window > 2V), enable portable physiology monitoring and in-situ recording. In this work, we report a fully CMOS-compatible technique for Lab-on-Chip biosensor application.

原文	英語
主出版物標題	2010 IEEE International Electron Devices Meeting, IEDM 2010
頁面	36.2.1-36.2.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703485
出版狀態	已出版 - 2010
事件	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, 美國持續時間: 06 12 2010 → 08 12 2010

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（列印）	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
國家/地區	美國
城市	San Francisco, CA
期間	06/12/10 → 08/12/10

存取文件

10.1109/IEDM.2010.5703485

其它文件與鏈接

Link to publication in Scopus

引用此

Chen, M. C., Chen, H. Y., Lin, C. Y., Tsai, C. M., Hsieh, C. F., Horng, J. T., Qiu, J. T., Huang, C. C., & Yang, F. L. (2010). A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology. 於 2010 IEEE International Electron Devices Meeting, IEDM 2010 (頁 36.2.1-36.2.4). 文章 5703485 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703485

@inproceedings{b94c6eccfb2c4107ba9ed0fab6eca704,

title = "A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology",

abstract = "For the first time, a novel smart biosensor with hybrid sensor/memory/CMOS poly-Si nanowire technology has been developed. Special designed oxide-nitride-oxide composite dielectric underneath 50nm nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. The detections of pH, hydrogen peroxide and DNA are demonstrated using various functionalized receptors. A substrate-ionic coupling operation of the buried-channel field-effect sensor exhibits superior pH sensitivity (V th shift > 100mV/pH) beyond Nernst limitation. The built-in memory of nanowire devices possess steady electrically Vth adjustment (Vth programming/erasing window > 2V), enable portable physiology monitoring and in-situ recording. In this work, we report a fully CMOS-compatible technique for Lab-on-Chip biosensor application.",

author = "Chen, \{Min Cheng\} and Chen, \{Hou Yu\} and Lin, \{Chia Yi\} and Tsai, \{Chuan Mei\} and Hsieh, \{Chung Fan\} and Horng, \{Jim Tong\} and Qiu, \{Jian Tai\} and Huang, \{Chien Chao\} and Yang, \{Fu Liang\}",

year = "2010",

doi = "10.1109/IEDM.2010.5703485",

language = "英语",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "36.2.1--36.2.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Chen, MC, Chen, HY, Lin, CY, Tsai, CM, Hsieh, CF , Horng, JT, Qiu, JT, Huang, CC & Yang, FL 2010, A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology. 於 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703485, Technical Digest - International Electron Devices Meeting, IEDM, 頁 36.2.1-36.2.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, 美國, 06/12/10. https://doi.org/10.1109/IEDM.2010.5703485

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T1 - A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology

AU - Chen, Min Cheng

AU - Chen, Hou Yu

AU - Lin, Chia Yi

AU - Tsai, Chuan Mei

AU - Hsieh, Chung Fan

AU - Horng, Jim Tong

AU - Qiu, Jian Tai

AU - Huang, Chien Chao

AU - Yang, Fu Liang

PY - 2010

Y1 - 2010

N2 - For the first time, a novel smart biosensor with hybrid sensor/memory/CMOS poly-Si nanowire technology has been developed. Special designed oxide-nitride-oxide composite dielectric underneath 50nm nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. The detections of pH, hydrogen peroxide and DNA are demonstrated using various functionalized receptors. A substrate-ionic coupling operation of the buried-channel field-effect sensor exhibits superior pH sensitivity (V th shift > 100mV/pH) beyond Nernst limitation. The built-in memory of nanowire devices possess steady electrically Vth adjustment (Vth programming/erasing window > 2V), enable portable physiology monitoring and in-situ recording. In this work, we report a fully CMOS-compatible technique for Lab-on-Chip biosensor application.

AB - For the first time, a novel smart biosensor with hybrid sensor/memory/CMOS poly-Si nanowire technology has been developed. Special designed oxide-nitride-oxide composite dielectric underneath 50nm nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. The detections of pH, hydrogen peroxide and DNA are demonstrated using various functionalized receptors. A substrate-ionic coupling operation of the buried-channel field-effect sensor exhibits superior pH sensitivity (V th shift > 100mV/pH) beyond Nernst limitation. The built-in memory of nanowire devices possess steady electrically Vth adjustment (Vth programming/erasing window > 2V), enable portable physiology monitoring and in-situ recording. In this work, we report a fully CMOS-compatible technique for Lab-on-Chip biosensor application.

UR - https://www.scopus.com/pages/publications/79951846897

U2 - 10.1109/IEDM.2010.5703485

DO - 10.1109/IEDM.2010.5703485

M3 - 会议稿件

AN - SCOPUS:79951846897

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 36.2.1-36.2.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology

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