A power amplifier MMIC using CPW structure technology

Chia Song Wu; Hsien Chin Chiu

A power amplifier MMIC using CPW structure technology

Chia Song Wu^*, Hsien Chin Chiu

^*此作品的通信作者

電子工程學系(含學碩博士班)

Vanung University Taiwan

研究成果: 專業出版物稿件的類型 › 文章

4 引文斯高帕斯（Scopus）

摘要

This article presents the performance of a two-stage X-/Ku-band microwave monolithic integrated circuit (MMIC) power amplifier using a 0.15 μm gate length InGaP/InGaAs E-mode pseudomorphic high electron mobility transistor (PHEMT) and a coplanar waveguide (CPW) topology. The power amplifier, with a chip size of 2.3 × 0.87 mm, gave an output power of 20 dBm and a power gain in excess of 20 dB. The input third-order intercept point (IIP3) is 1.4 dBm and the output third-order intercept point (OIP3) is 24.5 dBm. The overall power characteristic exhibits high gain and linearity, which illustrates that the power amplifier is compact and exhibits favorable RF characteristics in the X-/Ku-band.

原文	英語
頁面	112-124
頁數	13
卷	50
無	11
專業出版物	Microwave Journal
出版狀態	已出版 - 11 2007

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title = "A power amplifier MMIC using CPW structure technology",

abstract = "This article presents the performance of a two-stage X-/Ku-band microwave monolithic integrated circuit (MMIC) power amplifier using a 0.15 μm gate length InGaP/InGaAs E-mode pseudomorphic high electron mobility transistor (PHEMT) and a coplanar waveguide (CPW) topology. The power amplifier, with a chip size of 2.3 × 0.87 mm, gave an output power of 20 dBm and a power gain in excess of 20 dB. The input third-order intercept point (IIP3) is 1.4 dBm and the output third-order intercept point (OIP3) is 24.5 dBm. The overall power characteristic exhibits high gain and linearity, which illustrates that the power amplifier is compact and exhibits favorable RF characteristics in the X-/Ku-band.",

author = "Wu, {Chia Song} and Chiu, {Hsien Chin}",

year = "2007",

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language = "英语",

volume = "50",

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journal = "Microwave Journal",

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AU - Chiu, Hsien Chin

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N2 - This article presents the performance of a two-stage X-/Ku-band microwave monolithic integrated circuit (MMIC) power amplifier using a 0.15 μm gate length InGaP/InGaAs E-mode pseudomorphic high electron mobility transistor (PHEMT) and a coplanar waveguide (CPW) topology. The power amplifier, with a chip size of 2.3 × 0.87 mm, gave an output power of 20 dBm and a power gain in excess of 20 dB. The input third-order intercept point (IIP3) is 1.4 dBm and the output third-order intercept point (OIP3) is 24.5 dBm. The overall power characteristic exhibits high gain and linearity, which illustrates that the power amplifier is compact and exhibits favorable RF characteristics in the X-/Ku-band.

AB - This article presents the performance of a two-stage X-/Ku-band microwave monolithic integrated circuit (MMIC) power amplifier using a 0.15 μm gate length InGaP/InGaAs E-mode pseudomorphic high electron mobility transistor (PHEMT) and a coplanar waveguide (CPW) topology. The power amplifier, with a chip size of 2.3 × 0.87 mm, gave an output power of 20 dBm and a power gain in excess of 20 dB. The input third-order intercept point (IIP3) is 1.4 dBm and the output third-order intercept point (OIP3) is 24.5 dBm. The overall power characteristic exhibits high gain and linearity, which illustrates that the power amplifier is compact and exhibits favorable RF characteristics in the X-/Ku-band.

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M3 - 文章

AN - SCOPUS:37149024471

SN - 0192-6225

VL - 50

SP - 112

EP - 124

JO - Microwave Journal

JF - Microwave Journal

ER -

A power amplifier MMIC using CPW structure technology

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