AlGaN films grown on (0001) sapphire by a two-step method

C. F. Shih; N. C. Chen; S. Y. Lin; K. S. Liu

doi:10.1063/1.1931058

AlGaN films grown on (0001) sapphire by a two-step method

C. F. Shih^*
, N. C. Chen
, S. Y. Lin
, K. S. Liu

^*此作品的通信作者

光電工程研究所(碩士班)

National Tsing Hua University
National Taiwan University

研究成果: 期刊稿件 › 文章 › 同行評審

32 引文斯高帕斯（Scopus）

摘要

A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2 Ga0.8 N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2 Ga0.8 N epilayer was obtained.

原文	英語
文章編號	211103
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	86
發行號	21
DOIs	https://doi.org/10.1063/1.1931058
出版狀態	已出版 - 23 05 2005

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abstract = "A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2 Ga0.8 N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2 Ga0.8 N epilayer was obtained.",

author = "Shih, \{C. F.\} and Chen, \{N. C.\} and Lin, \{S. Y.\} and Liu, \{K. S.\}",

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AU - Shih, C. F.

AU - Chen, N. C.

AU - Lin, S. Y.

AU - Liu, K. S.

PY - 2005/5/23

Y1 - 2005/5/23

N2 - A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2 Ga0.8 N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2 Ga0.8 N epilayer was obtained.

AB - A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2 Ga0.8 N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2 Ga0.8 N epilayer was obtained.

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M3 - 文章

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211103

ER -

AlGaN films grown on (0001) sapphire by a two-step method

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