Ambipolar carrier injection of gold nanocrystal nonvolatile memory with different tunneling oxide thickness

Yu Hua Liu; Chin Hsiang Liao; Chih Ting Lin; Jer Chyi Wang

doi:10.1109/INEC.2014.7460427

Ambipolar carrier injection of gold nanocrystal nonvolatile memory with different tunneling oxide thickness

Yu Hua Liu, Chin Hsiang Liao, Chih Ting Lin, Jer Chyi Wang^*

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

Ambipolar carrier injection and charge retention phenomenon of gold-nanocrystal (Au-NC) memories with different tunneling oxide (TO) thickness were investigated. For the samples with thin TO (∼3 nm), the electrons were injected from the substrate at positive gate bias. With the increase of TO thickness, the holes injected from the gate became more significant. Compared with the gate injected holes in the sample with thick TO, the substrate injected electrons in the sample with thin TO show a higher charge loss. The poor charge retention can be ascribed to the direct tunneling leakage current through the thin TO. Further, the Au-NC memories with electrons exhibit lower activation energy of charge loss than that with holes, which is due to the lower electron barrier height of the Au-NC memory.

原文	英語
主出版物標題	2014 IEEE International Nanoelectronics Conference, INEC 2014
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781479950379
DOIs	https://doi.org/10.1109/INEC.2014.7460427
出版狀態	已出版 - 26 04 2016
事件	IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, 日本持續時間: 28 07 2014 → 31 07 2014

出版系列

名字	2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

Conference	IEEE International Nanoelectronics Conference, INEC 2014
國家/地區	日本
城市	Sapporo
期間	28/07/14 → 31/07/14

文獻附註

Publisher Copyright:
© 2014 IEEE.

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10.1109/INEC.2014.7460427

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Link to publication in Scopus

引用此

Liu, Y. H., Liao, C. H., Lin, C. T., & Wang, J. C. (2016). Ambipolar carrier injection of gold nanocrystal nonvolatile memory with different tunneling oxide thickness. 於 2014 IEEE International Nanoelectronics Conference, INEC 2014 文章 7460427 (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460427

@inproceedings{c1135c993d2d418087bab2359ebde24c,

title = "Ambipolar carrier injection of gold nanocrystal nonvolatile memory with different tunneling oxide thickness",

abstract = "Ambipolar carrier injection and charge retention phenomenon of gold-nanocrystal (Au-NC) memories with different tunneling oxide (TO) thickness were investigated. For the samples with thin TO (∼3 nm), the electrons were injected from the substrate at positive gate bias. With the increase of TO thickness, the holes injected from the gate became more significant. Compared with the gate injected holes in the sample with thick TO, the substrate injected electrons in the sample with thin TO show a higher charge loss. The poor charge retention can be ascribed to the direct tunneling leakage current through the thin TO. Further, the Au-NC memories with electrons exhibit lower activation energy of charge loss than that with holes, which is due to the lower electron barrier height of the Au-NC memory.",

keywords = "activation energy, ambipolar, gate injection, gold nanocrystal, nonvolatile memory",

author = "Liu, {Yu Hua} and Liao, {Chin Hsiang} and Lin, {Chih Ting} and Wang, {Jer Chyi}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; IEEE International Nanoelectronics Conference, INEC 2014 ; Conference date: 28-07-2014 Through 31-07-2014",

year = "2016",

month = apr,

day = "26",

doi = "10.1109/INEC.2014.7460427",

language = "英语",

series = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

address = "美国",

}

Liu, YH, Liao, CH, Lin, CT & Wang, JC 2016, Ambipolar carrier injection of gold nanocrystal nonvolatile memory with different tunneling oxide thickness. 於 2014 IEEE International Nanoelectronics Conference, INEC 2014., 7460427, 2014 IEEE International Nanoelectronics Conference, INEC 2014, Institute of Electrical and Electronics Engineers Inc., IEEE International Nanoelectronics Conference, INEC 2014, Sapporo, 日本, 28/07/14. https://doi.org/10.1109/INEC.2014.7460427

Ambipolar carrier injection of gold nanocrystal nonvolatile memory with different tunneling oxide thickness. / Liu, Yu Hua; Liao, Chin Hsiang; Lin, Chih Ting 等.
2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460427 (2014 IEEE International Nanoelectronics Conference, INEC 2014).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Ambipolar carrier injection of gold nanocrystal nonvolatile memory with different tunneling oxide thickness

AU - Liu, Yu Hua

AU - Liao, Chin Hsiang

AU - Lin, Chih Ting

AU - Wang, Jer Chyi

PY - 2016/4/26

Y1 - 2016/4/26

N2 - Ambipolar carrier injection and charge retention phenomenon of gold-nanocrystal (Au-NC) memories with different tunneling oxide (TO) thickness were investigated. For the samples with thin TO (∼3 nm), the electrons were injected from the substrate at positive gate bias. With the increase of TO thickness, the holes injected from the gate became more significant. Compared with the gate injected holes in the sample with thick TO, the substrate injected electrons in the sample with thin TO show a higher charge loss. The poor charge retention can be ascribed to the direct tunneling leakage current through the thin TO. Further, the Au-NC memories with electrons exhibit lower activation energy of charge loss than that with holes, which is due to the lower electron barrier height of the Au-NC memory.

AB - Ambipolar carrier injection and charge retention phenomenon of gold-nanocrystal (Au-NC) memories with different tunneling oxide (TO) thickness were investigated. For the samples with thin TO (∼3 nm), the electrons were injected from the substrate at positive gate bias. With the increase of TO thickness, the holes injected from the gate became more significant. Compared with the gate injected holes in the sample with thick TO, the substrate injected electrons in the sample with thin TO show a higher charge loss. The poor charge retention can be ascribed to the direct tunneling leakage current through the thin TO. Further, the Au-NC memories with electrons exhibit lower activation energy of charge loss than that with holes, which is due to the lower electron barrier height of the Au-NC memory.

KW - activation energy

KW - ambipolar

KW - gate injection

KW - gold nanocrystal

KW - nonvolatile memory

UR - http://www.scopus.com/inward/record.url?scp=84971320901&partnerID=8YFLogxK

U2 - 10.1109/INEC.2014.7460427

DO - 10.1109/INEC.2014.7460427

M3 - 会议稿件

AN - SCOPUS:84971320901

T3 - 2014 IEEE International Nanoelectronics Conference, INEC 2014

BT - 2014 IEEE International Nanoelectronics Conference, INEC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Nanoelectronics Conference, INEC 2014

Y2 - 28 July 2014 through 31 July 2014

ER -

Liu YH, Liao CH, Lin CT, Wang JC. Ambipolar carrier injection of gold nanocrystal nonvolatile memory with different tunneling oxide thickness. 於 2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc. 2016. 7460427. (2014 IEEE International Nanoelectronics Conference, INEC 2014). doi: 10.1109/INEC.2014.7460427

Ambipolar carrier injection of gold nanocrystal nonvolatile memory with different tunneling oxide thickness

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