An approach to statistical analysis of gate oxide breakdown mechanisms

Cher Ming Tan*, Nagarajan Raghavan

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

10 引文 斯高帕斯(Scopus)

摘要

A credible statistical algorithm is required to determine the parameters of the bimodal Weibull mixture distribution exhibited by the gate oxide breakdown phenomenon, consisting of extrinsic early-life defect-induced failures and intrinsic wear-out failure mechanisms. We use a global maximization algorithm called simulated annealing (SA) in conjunction with the expectation-maximization (EM) algorithm to maximize the log-likelihood function of multi-censored gate oxide failure data. The results show that the proposed statistical algorithm provides a good fit to the stochastic nature of the test failure data. The Akaike information criterion (AIC) is used to verify the number of failure mechanisms in the given set of data and the Bayes' posterior probability theory is utilized to determine the probability of each failure data belonging to different failure mechanisms.

原文英語
頁(從 - 到)1336-1342
頁數7
期刊Microelectronics Reliability
47
發行號9-11 SPEC. ISS.
DOIs
出版狀態已出版 - 08 2007
對外發佈

指紋

深入研究「An approach to statistical analysis of gate oxide breakdown mechanisms」主題。共同形成了獨特的指紋。

引用此