An Empirical GaN HEMT DC Model for Power Converters

Ting Chieh Lin; Deng Fong Lu; Chin Hsia

doi:10.1109/ICCE-TW46550.2019.8991880

An Empirical GaN HEMT DC Model for Power Converters

Ting Chieh Lin, Deng Fong Lu, Chin Hsia

National Central University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.

原文	英語
主出版物標題	2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781728132792
DOIs	https://doi.org/10.1109/ICCE-TW46550.2019.8991880
出版狀態	已出版 - 05 2019
對外發佈	是
事件	6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 - Yilan, 台灣持續時間: 20 05 2019 → 22 05 2019

出版系列

名字	2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019

Conference

Conference	6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019
國家/地區	台灣
城市	Yilan
期間	20/05/19 → 22/05/19

文獻附註

Publisher Copyright:
© 2019 IEEE.

存取文件

10.1109/ICCE-TW46550.2019.8991880

其它文件與鏈接

Link to publication in Scopus

引用此

Lin, T. C., Lu, D. F., & Hsia, C. (2019). An Empirical GaN HEMT DC Model for Power Converters. 於 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 文章 8991880 (2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCE-TW46550.2019.8991880

@inproceedings{1ed348189c3d442abebf81afd08043f1,

title = "An Empirical GaN HEMT DC Model for Power Converters",

abstract = "This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.",

author = "Lin, {Ting Chieh} and Lu, {Deng Fong} and Chin Hsia",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019 ; Conference date: 20-05-2019 Through 22-05-2019",

year = "2019",

month = may,

doi = "10.1109/ICCE-TW46550.2019.8991880",

language = "英语",

series = "2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019",

address = "美国",

}

Lin, TC, Lu, DF & Hsia, C 2019, An Empirical GaN HEMT DC Model for Power Converters. 於 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019., 8991880, 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019, Institute of Electrical and Electronics Engineers Inc., 6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019, Yilan, 台灣, 20/05/19. https://doi.org/10.1109/ICCE-TW46550.2019.8991880

An Empirical GaN HEMT DC Model for Power Converters. / Lin, Ting Chieh; Lu, Deng Fong; Hsia, Chin.
2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8991880 (2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - An Empirical GaN HEMT DC Model for Power Converters

AU - Lin, Ting Chieh

AU - Lu, Deng Fong

AU - Hsia, Chin

PY - 2019/5

Y1 - 2019/5

N2 - This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.

AB - This paper presents an empirical equation-based DC device model of GaN-on-Si high electron-mobility transistors (HEMTs), amenable for applications in high performance integrated circuit design into power converters. The output current and the derived trans-conductance based on the fitted equation coefficients were compared with the measured data of the GaN HEMT. A linear regulator design based on the investigated GaN devices was used to validate the derived model.

UR - http://www.scopus.com/inward/record.url?scp=85080135956&partnerID=8YFLogxK

U2 - 10.1109/ICCE-TW46550.2019.8991880

DO - 10.1109/ICCE-TW46550.2019.8991880

M3 - 会议稿件

AN - SCOPUS:85080135956

T3 - 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019

BT - 2019 IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2019

Y2 - 20 May 2019 through 22 May 2019

ER -

An Empirical GaN HEMT DC Model for Power Converters

摘要

出版系列

Conference

文獻附註

存取文件

其它文件與鏈接

指紋

引用此