An improved 0.25µm GaN on sic MMIC technology for radar and 5G Applications

An improved 0.25µm GaN HEMT technology has been created by optimizing the fabrication process and the epitaxial layer structure. The pulsed I-V characteristics have been improved with typical gate-lag and drain-lag of 16% and 6%, respectively. The transistor for RF power amplifier use has the small signal gain improved by 1.8dB up to 20.3dB, the power density 3dB into compression increased from 4.2 to 4.7W/mm, and the maximum power-added efficiency improved from 59.6% to 64.7% at 10GHz. The transistor for RF switch use exhibits switching speed of 13.1ns on falling edge and 35.8ns on the rising edge of output signal. The changes to the process have resulted in enhanced HTRB reliability performance with a signature of leakage current being significantly suppressed over time providing stable and reliable operation.