Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiOx/SiO2 solid electrolytes

Jer Chyi Wang; Chun Hsiang Chiu; Ya Ting Chan; Chao Sung Lai

doi:10.1109/IPFA.2015.7224455

Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes

Jer Chyi Wang^*, Chun Hsiang Chiu, Ya Ting Chan, Chao Sung Lai

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

The influence of current compliance (I_CC) on resistive switching (RS) of silver programmable metallization cells (Ag-PMCs) with stacked SiO_x/SiO₂ solid electrolytes has been investigated by carrier transportation and capacitance-voltage measurements. The low I_CC of 10 μA leads to the superior multilevel RS characteristics because of a locally discontinuous conductive filament within the stacked solid electrolytes. Possible RS mechanisms of Ag-PMCs with different I_CC are proposed according to the electrical analyses. Thus, the stacked-solid-electrolyte Ag-PMCs are considered as the promising candidate for future high-density nonvolatile memory application.

原文	英語
主出版物標題	Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	548-551
頁數	4
ISBN（電子）	9781479999286, 9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224455
出版狀態	已出版 - 25 08 2015
事件	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, 台灣持續時間: 29 06 2015 → 02 07 2015

出版系列

名字	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
卷	2015-August

Conference

Conference	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
國家/地區	台灣
城市	Hsinchu
期間	29/06/15 → 02/07/15

文獻附註

Publisher Copyright:
© 2015 IEEE.

存取文件

10.1109/IPFA.2015.7224455

其它文件與鏈接

Link to publication in Scopus

引用此

Wang, J. C., Chiu, C. H., Chan, Y. T., & Lai, C. S. (2015). Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes. 於 Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (頁 548-551). 文章 7224455 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224455

Wang, Jer Chyi ; Chiu, Chun Hsiang ; Chan, Ya Ting 等. / Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes. Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 頁 548-551 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{51f164f650d2494aa86af4d9390e169f,

title = "Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiOx/SiO2 solid electrolytes",

abstract = "The influence of current compliance (ICC) on resistive switching (RS) of silver programmable metallization cells (Ag-PMCs) with stacked SiOx/SiO2 solid electrolytes has been investigated by carrier transportation and capacitance-voltage measurements. The low ICC of 10 μA leads to the superior multilevel RS characteristics because of a locally discontinuous conductive filament within the stacked solid electrolytes. Possible RS mechanisms of Ag-PMCs with different ICC are proposed according to the electrical analyses. Thus, the stacked-solid-electrolyte Ag-PMCs are considered as the promising candidate for future high-density nonvolatile memory application.",

author = "Wang, {Jer Chyi} and Chiu, {Chun Hsiang} and Chan, {Ya Ting} and Lai, {Chao Sung}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",

year = "2015",

month = aug,

day = "25",

doi = "10.1109/IPFA.2015.7224455",

language = "英语",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "548--551",

booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",

address = "美国",

}

Wang, JC, Chiu, CH, Chan, YT & Lai, CS 2015, Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes. 於 Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015., 7224455, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 卷 2015-August, Institute of Electrical and Electronics Engineers Inc., 頁 548-551, 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015, Hsinchu, 台灣, 29/06/15. https://doi.org/10.1109/IPFA.2015.7224455

Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes. / Wang, Jer Chyi; Chiu, Chun Hsiang; Chan, Ya Ting 等.
Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 548-551 7224455 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; 卷 2015-August).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiOx/SiO2 solid electrolytes

AU - Wang, Jer Chyi

AU - Chiu, Chun Hsiang

AU - Chan, Ya Ting

AU - Lai, Chao Sung

PY - 2015/8/25

Y1 - 2015/8/25

N2 - The influence of current compliance (ICC) on resistive switching (RS) of silver programmable metallization cells (Ag-PMCs) with stacked SiOx/SiO2 solid electrolytes has been investigated by carrier transportation and capacitance-voltage measurements. The low ICC of 10 μA leads to the superior multilevel RS characteristics because of a locally discontinuous conductive filament within the stacked solid electrolytes. Possible RS mechanisms of Ag-PMCs with different ICC are proposed according to the electrical analyses. Thus, the stacked-solid-electrolyte Ag-PMCs are considered as the promising candidate for future high-density nonvolatile memory application.

AB - The influence of current compliance (ICC) on resistive switching (RS) of silver programmable metallization cells (Ag-PMCs) with stacked SiOx/SiO2 solid electrolytes has been investigated by carrier transportation and capacitance-voltage measurements. The low ICC of 10 μA leads to the superior multilevel RS characteristics because of a locally discontinuous conductive filament within the stacked solid electrolytes. Possible RS mechanisms of Ag-PMCs with different ICC are proposed according to the electrical analyses. Thus, the stacked-solid-electrolyte Ag-PMCs are considered as the promising candidate for future high-density nonvolatile memory application.

UR - http://www.scopus.com/inward/record.url?scp=84949763336&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2015.7224455

DO - 10.1109/IPFA.2015.7224455

M3 - 会议稿件

AN - SCOPUS:84949763336

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 548

EP - 551

BT - Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015

Y2 - 29 June 2015 through 2 July 2015

ER -

Wang JC, Chiu CH, Chan YT, Lai CS. Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiO_x/SiO₂ solid electrolytes. 於 Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 548-551. 7224455. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2015.7224455