Analysis of electromigration test data

Cher Ming Tan; Woon Loon See; J. Kah Chin Tey

doi:10.1109/ICSICT.2001.982055

Analysis of electromigration test data

Cher Ming Tan
, Woon Loon See
, J. Kah Chin Tey

Nanyang Technological University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Wafer level electromigration test is now a common practice in the semiconductor industry. Among the various fast wafer level electromigration tests, wafer level isothermal joule heated electromigration test (WIJET) is found to be most accurate for predicting the lifetime of metal line in ULSI. In order to reduce the test time, the temperature and current density of WIJET is usually increased to a high level. However, this could violate the important basic requirements of accelerated life testing (ALT), i.e. only one failure mechanism occurring during ALT, and the failure mechanism is the same as that under normal operating condition. In this work, the effect of temperature during WIJET on the fulfillment of these two requirements will be examined.

原文	英語
主出版物標題	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
編輯	Hiroshi Iwai, Xin-Ping Qu, Bing-Zong Li, Guo-Ping Ru, Paul Yu
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	964-966
頁數	3
ISBN（電子）	0780365208, 9780780365209
DOIs	https://doi.org/10.1109/ICSICT.2001.982055
出版狀態	已出版 - 2001
對外發佈	是
事件	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, 中國持續時間: 22 10 2001 → 25 10 2001

出版系列

名字	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
卷	2

Conference

Conference	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
國家/地區	中國
城市	Shanghai
期間	22/10/01 → 25/10/01

文獻附註

Publisher Copyright:
© 2001 IEEE.

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10.1109/ICSICT.2001.982055

其它文件與鏈接

Link to publication in Scopus

引用此

Tan, C. M., See, W. L., & Kah Chin Tey, J. (2001). Analysis of electromigration test data. 於 H. Iwai, X.-P. Qu, B.-Z. Li, G.-P. Ru, & P. Yu (編輯), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (頁 964-966). 文章 982055 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; 卷 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.982055

Tan, Cher Ming ; See, Woon Loon ; Kah Chin Tey, J. / Analysis of electromigration test data. 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. 編輯 / Hiroshi Iwai ; Xin-Ping Qu ; Bing-Zong Li ; Guo-Ping Ru ; Paul Yu. Institute of Electrical and Electronics Engineers Inc., 2001. 頁 964-966 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings).

@inproceedings{7d202edde2224841afa41a37b665a050,

title = "Analysis of electromigration test data",

abstract = "Wafer level electromigration test is now a common practice in the semiconductor industry. Among the various fast wafer level electromigration tests, wafer level isothermal joule heated electromigration test (WIJET) is found to be most accurate for predicting the lifetime of metal line in ULSI. In order to reduce the test time, the temperature and current density of WIJET is usually increased to a high level. However, this could violate the important basic requirements of accelerated life testing (ALT), i.e. only one failure mechanism occurring during ALT, and the failure mechanism is the same as that under normal operating condition. In this work, the effect of temperature during WIJET on the fulfillment of these two requirements will be examined.",

author = "Tan, \{Cher Ming\} and See, \{Woon Loon\} and \{Kah Chin Tey\}, J.",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",

year = "2001",

doi = "10.1109/ICSICT.2001.982055",

language = "英语",

series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "964--966",

editor = "Hiroshi Iwai and Xin-Ping Qu and Bing-Zong Li and Guo-Ping Ru and Paul Yu",

booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

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}

Tan, CM, See, WL & Kah Chin Tey, J 2001, Analysis of electromigration test data. 於 H Iwai, X-P Qu, B-Z Li, G-P Ru & P Yu (編輯), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings., 982055, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings, 卷 2, Institute of Electrical and Electronics Engineers Inc., 頁 964-966, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, 中國, 22/10/01. https://doi.org/10.1109/ICSICT.2001.982055

Analysis of electromigration test data. / Tan, Cher Ming; See, Woon Loon; Kah Chin Tey, J.
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. 編輯 / Hiroshi Iwai; Xin-Ping Qu; Bing-Zong Li; Guo-Ping Ru; Paul Yu. Institute of Electrical and Electronics Engineers Inc., 2001. p. 964-966 982055 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; 卷 2).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

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T1 - Analysis of electromigration test data

AU - Tan, Cher Ming

AU - See, Woon Loon

AU - Kah Chin Tey, J.

PY - 2001

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N2 - Wafer level electromigration test is now a common practice in the semiconductor industry. Among the various fast wafer level electromigration tests, wafer level isothermal joule heated electromigration test (WIJET) is found to be most accurate for predicting the lifetime of metal line in ULSI. In order to reduce the test time, the temperature and current density of WIJET is usually increased to a high level. However, this could violate the important basic requirements of accelerated life testing (ALT), i.e. only one failure mechanism occurring during ALT, and the failure mechanism is the same as that under normal operating condition. In this work, the effect of temperature during WIJET on the fulfillment of these two requirements will be examined.

AB - Wafer level electromigration test is now a common practice in the semiconductor industry. Among the various fast wafer level electromigration tests, wafer level isothermal joule heated electromigration test (WIJET) is found to be most accurate for predicting the lifetime of metal line in ULSI. In order to reduce the test time, the temperature and current density of WIJET is usually increased to a high level. However, this could violate the important basic requirements of accelerated life testing (ALT), i.e. only one failure mechanism occurring during ALT, and the failure mechanism is the same as that under normal operating condition. In this work, the effect of temperature during WIJET on the fulfillment of these two requirements will be examined.

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A2 - Iwai, Hiroshi

A2 - Qu, Xin-Ping

A2 - Li, Bing-Zong

A2 - Ru, Guo-Ping

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PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Tan CM, See WL, Kah Chin Tey J. Analysis of electromigration test data. 於 Iwai H, Qu XP, Li BZ, Ru GP, Yu P, 編輯, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 964-966. 982055. (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings). doi: 10.1109/ICSICT.2001.982055

Analysis of electromigration test data

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