Analysis of tunable negative refraction in a lossy and extrinsic semiconductor

Tsung Wen Chang, Yi Min Zeng, Chien Jang Wu*

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this work, within the framework of an inhomogeneous wave, we study the wave transmission at the boundary between air and a lossy extrinsic semiconductor of n-type indium antimonide. Transmission properties such as negative refraction are specifically investigated. The choice of such a semiconductor enables us to study the tunable features in the negative refraction because its permittivity is a function of the frequency, the temperature, and the doping concentration. It is found that there exist a threshold temperature and a threshold frequency in order to obtain the negative refraction. The dependence of threshold temperature on the doping concentration and the operating frequency will be numerically demonstrated. The analysis of negative refraction can be used to study the electromagnetic response for a lossy and extrinsic semiconductor.

原文英語
頁(從 - 到)658-662
頁數5
期刊Applied Optics
54
發行號4
DOIs
出版狀態已出版 - 2015

文獻附註

Publisher Copyright:
© 2015 Optical Society of America.

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