Analytical delay model of CMOS inverter including channel-length modulation

H. C. Chow; W. S. Feng

doi:10.1049/el:19920256

Analytical delay model of CMOS inverter including channel-length modulation

H. C. Chow
, W. S. Feng

National Taiwan University

研究成果: 期刊稿件 › 文章 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

An analytical delay model of a CMOS inverter is introduced for the first time which includes channel-length modulation, source-drain resistance and high-field effects. Calculations of the rise, fall and delay times show good agreement with SPICE simulations.

原文	英語
頁（從 - 到）	408-410
頁數	3
期刊	Electronics Letters
卷	28
發行號	4
DOIs	https://doi.org/10.1049/el:19920256
出版狀態	已出版 - 02 1992
對外發佈	是

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keywords = "Fieldeffect transistors, Semiconductor devices and materials",

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KW - Semiconductor devices and materials

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DO - 10.1049/el:19920256

M3 - 文章

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EP - 410

JO - Electronics Letters

JF - Electronics Letters

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Analytical delay model of CMOS inverter including channel-length modulation

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