Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems

Yeu Jent Hu, Yi Wen Huang, Chia Hui Fang, Jen Cheng Wang, Yu Fang Chen, Tzer En Nee*

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

2 引文 斯高帕斯(Scopus)

摘要

The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement.

原文英語
頁(從 - 到)1000-1004
頁數5
期刊Journal of Luminescence
130
發行號6
DOIs
出版狀態已出版 - 06 2010
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