摘要
The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement.
原文 | 英語 |
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頁(從 - 到) | 1000-1004 |
頁數 | 5 |
期刊 | Journal of Luminescence |
卷 | 130 |
發行號 | 6 |
DOIs | |
出版狀態 | 已出版 - 06 2010 |
對外發佈 | 是 |