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Anomalous disordered-related phenomena in the InGaN/GaN multiple quantum well heterosystems

  • Yi Wen Haung*
  • , Yu Fang Chen
  • , Jen Cheng Wang
  • , Hui Tang Shen
  • , Tzer En Nee
  • *此作品的通信作者
  • Chang Gung University

研究成果: 圖書/報告稿件的類型會議稿件同行評審

摘要

Influences of InGaN/GaN MQW heterostructures with InGaN/GaN and GaN barrier on the carrier confinement have been investigated the degree of disorder over a broad range of temperatures from 20 K to 300 K.

原文英語
主出版物標題2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs
出版狀態已出版 - 2009
事件2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, 中國
持續時間: 13 07 200917 07 2009

出版系列

名字2009 14th OptoElectronics and Communications Conference, OECC 2009

Conference

Conference2009 14th OptoElectronics and Communications Conference, OECC 2009
國家/地區中國
城市Hong Kong
期間13/07/0917/07/09

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