Band alignments in sidewall strained Si/strained SiGe heterostructures

X. Wang; D. L. Kencke; K. C. Liu; L. F. Register; S. K. Banerjee

doi:10.1016/S0038-1101(02)00247-2

Band alignments in sidewall strained Si/strained SiGe heterostructures

X. Wang^*
, D. L. Kencke
, K. C. Liu
, L. F. Register
, S. K. Banerjee

^*此作品的通信作者

研究成果: 期刊稿件 › 文章 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The band edge shift and splitting in an orthorhombically strained Si (OS-Si) layer grown on the sidewall of a compressively strained SiGe (CS-SiGe) alloy is calculated in terms of model-solid theory. Both the valence and conduction band edges of the OS-Si are predicted to be lower than those of CS-SiGe. Compared with tensily strained Si grown on a relaxed SiGe alloy, the conduction band offset between OS-Si and CS-SiGe is smaller, while the valence band offset is larger.

原文	英語
頁（從 - 到）	2021-2025
頁數	5
期刊	Solid-State Electronics
卷	46
發行號	12
DOIs	https://doi.org/10.1016/S0038-1101(02)00247-2
出版狀態	已出版 - 12 2002
對外發佈	是

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title = "Band alignments in sidewall strained Si/strained SiGe heterostructures",

abstract = "The band edge shift and splitting in an orthorhombically strained Si (OS-Si) layer grown on the sidewall of a compressively strained SiGe (CS-SiGe) alloy is calculated in terms of model-solid theory. Both the valence and conduction band edges of the OS-Si are predicted to be lower than those of CS-SiGe. Compared with tensily strained Si grown on a relaxed SiGe alloy, the conduction band offset between OS-Si and CS-SiGe is smaller, while the valence band offset is larger.",

author = "X. Wang and Kencke, \{D. L.\} and Liu, \{K. C.\} and Register, \{L. F.\} and Banerjee, \{S. K.\}",

year = "2002",

month = dec,

doi = "10.1016/S0038-1101(02)00247-2",

language = "英语",

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TY - JOUR

T1 - Band alignments in sidewall strained Si/strained SiGe heterostructures

AU - Wang, X.

AU - Kencke, D. L.

AU - Liu, K. C.

AU - Register, L. F.

AU - Banerjee, S. K.

PY - 2002/12

Y1 - 2002/12

N2 - The band edge shift and splitting in an orthorhombically strained Si (OS-Si) layer grown on the sidewall of a compressively strained SiGe (CS-SiGe) alloy is calculated in terms of model-solid theory. Both the valence and conduction band edges of the OS-Si are predicted to be lower than those of CS-SiGe. Compared with tensily strained Si grown on a relaxed SiGe alloy, the conduction band offset between OS-Si and CS-SiGe is smaller, while the valence band offset is larger.

AB - The band edge shift and splitting in an orthorhombically strained Si (OS-Si) layer grown on the sidewall of a compressively strained SiGe (CS-SiGe) alloy is calculated in terms of model-solid theory. Both the valence and conduction band edges of the OS-Si are predicted to be lower than those of CS-SiGe. Compared with tensily strained Si grown on a relaxed SiGe alloy, the conduction band offset between OS-Si and CS-SiGe is smaller, while the valence band offset is larger.

UR - https://www.scopus.com/pages/publications/0036890542

U2 - 10.1016/S0038-1101(02)00247-2

DO - 10.1016/S0038-1101(02)00247-2

M3 - 文章

AN - SCOPUS:0036890542

SN - 0038-1101

VL - 46

SP - 2021

EP - 2025

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

Band alignments in sidewall strained Si/strained SiGe heterostructures

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