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Base pressure effects on the structure, surface roughness and electrical resistivity of Mo thin films by RF magnetron sputtering

  • Ming Jer Jeng
  • , Wen Kai Lei
  • , Wei Lun Ku
  • , Liann Be Chang
  • , Ching Wen Wu
  • , Yong Tian Lu
  • , Sung Cheng Hu
  • Chang Gung University
  • Chung-Sung Institute of Science and Technology

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

3 引文 斯高帕斯(Scopus)

摘要

Molybdenum (Mo) thin films were deposited on soda-lime glass substrate by using RF magnetron sputtering. As is well known, base pressure in sputtering is a processing parameter for preparing high quality Mo films, in addition to RF power and working pressure. The structure, surface roughness and electrical resistivity of Mo thin films were investigated at three base pressures of 1.8×10-7, 5.8×10-7and 2.7×10 -6 torr. Experimental results indicate that the Mo films deposited at a low base pressure of 1.8×10-7 torr exhibit a low electrical resistivity of 8.9×10-6 Ωcm, a low root mean square value of roughness of 4.92nm and a stronger peak intensity of (110) plane than that of the other two pressures. This finding suggests that Mo films sputtered at a low base pressure have higher crystallinity, larger grain size, smoother surface morphology and lower electrical resistivity than those sputtered at a high base pressure.

原文英語
主出版物標題Advanced Materials Research
頁面161-165
頁數5
DOIs
出版狀態已出版 - 2011
事件2011 International Conference on Advanced Material Research, ICAMR 2011 - Chongqing, 中國
持續時間: 21 01 2011 → 23 01 2011

出版系列

名字Advanced Materials Research
卷213
ISSN(列印)1022-6680

Conference

Conference2011 International Conference on Advanced Material Research, ICAMR 2011
國家/地區中國
城市Chongqing
期間21/01/11 → 23/01/11

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