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Calculation of sputtering rate by a Monte Carlo method

  • J. H. Hsieh*
  • , C. Li
  • *此作品的通信作者
  • Nanyang Technological University

研究成果: 期刊稿件文章同行評審

2 引文 斯高帕斯(Scopus)

摘要

The sputtering rate during a plasma-assisted process was calculated. Monte Carlo simulation was used for the calculation. It was observed that sputtering was one of the most important mechanisms occurring on the cathod during a plasma-assisted process.

原文英語
頁(從 - 到)1125-1126
頁數2
期刊Journal of Materials Science Letters
22
發行號16
DOIs
出版狀態已出版 - 15 08 2003
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